Datasheet > SM5073E6S

SM5073E6S

更新时间： 2024-02-04 11:54:25

品牌	Logo	应用领域
NPC		石英晶振压控振荡器
页数	文件大小	规格书
14页	108K
描述
VCXO ICs with Built-in Varicap

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技术参数
数据手册

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SM5073E6S 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
Reach Compliance Code：	unknown	风险等级：	5.92

SM5073E6S 数据手册

SM5073 series

SM5073B×S

= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.

C SS

Rating

Typ

2.75

0.2

–

Parameter

Symbol

Conditions

Unit

Min

2.5

–

Max

–

HIGH-level output voltage

LOW-level output voltage

Q: Measurement circuit 1, I = 6mA

0.4

–

= V

–

µA

Q: Measurement circuit 6,

INHN = LOW

Output leakage current

= V

–

HIGH-level input voltage

LOW-level input voltage

INHN

0.7V

–

0.3V

SM5073B1S

kΩ

Measurement circuit 2, load

circuit 1, INHN = open,

C = 15pF,

SM5073B2S

–

Current consumption

SM5073B3S

–

7.5

100

300

0.72

200

23.5

180

540

0.94

360

f = 23MHz

SM5073B4S to 6S

–

INHN pull-up resistance

Measurement circuit 3

150

0.50

100

Design value. A monitor pattern on a wafer is

tested.

Built-in resistance

Measurement circuit 4

Design value. A monitor pattern on a wafer is

tested.

100

180

kΩ

= 0.3V

= 3.0V

11.0

2.3

14.6

4.0

18.2

5.7

Design value. A monitor

pattern on a wafer is tested.

Built-in capacitance

25.5

34.5

Design value. A monitor pattern on a wafer is

tested.

12.7

17.3

SEIKO NPC CORPORATION —6

1...3 4 567 8 9...14

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