Datasheet > SM5073E4S

SM5073E4S

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
NPC		石英晶振压控振荡器
页数	文件大小	规格书
14页	108K
描述
VCXO ICs with Built-in Varicap

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数据手册

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SM5073E4S 数据手册

SM5073 series

ELECTRICAL CHARACTERISTICS

SM5073A×S

= 3.0 to 3.6V, V = 1.65V, V = 0V, Ta = –40 to +85°C, unless otherwise noted.

C SS

Rating

Typ

2.75

0.2

–

Parameter

Symbol

Conditions

Unit

Min

2.5

–

Max

–

HIGH-level output voltage

LOW-level output voltage

Q: Measurement circuit 1, I = 6mA

0.4

–

= V

–

µA

Q: Measurement circuit 6,

INHN = LOW

Output leakage current

= V

–

HIGH-level input voltage

LOW-level input voltage

INHN

0.7V

–

0.3V

SM5073A1S

22.5

kΩ

Measurement circuit 2, load

circuit 1, INHN = open,

C = 15pF,

SM5073A2S

–

7.5

Current consumption

SM5073A3S

–

f = 16MHz

SM5073A4S to 6S

–

INHN pull-up resistance

Measurement circuit 3

150

0.67

100

300

0.96

200

180

540

1.25

360

Design value. A monitor pattern on a wafer is

tested.

Built-in resistance

Measurement circuit 4

Design value. A monitor pattern on a wafer is

tested.

100

180

kΩ

= 0.3V

= 3.0V

11.0

2.4

14.4

4.0

17.8

5.6

Design value. A monitor

pattern on a wafer is tested.

Built-in capacitance

25.5

34.5

Design value. A monitor pattern on a wafer is

tested.

8.5

11.5

SEIKO NPC CORPORATION —5

1 2 3 456 7 8...14

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