5秒后页面跳转
SLG55031 PDF预览

SLG55031

更新时间: 2023-12-20 18:46:10
品牌 Logo 应用领域
瑞萨 - RENESAS
页数 文件大小 规格书
13页 389K
描述
High Voltage Gate Driver

SLG55031 数据手册

 浏览型号SLG55031的Datasheet PDF文件第3页浏览型号SLG55031的Datasheet PDF文件第4页浏览型号SLG55031的Datasheet PDF文件第5页浏览型号SLG55031的Datasheet PDF文件第7页浏览型号SLG55031的Datasheet PDF文件第8页浏览型号SLG55031的Datasheet PDF文件第9页 
SLG55031  
ꢀꢀꢀꢀ  
If V_DRAIN is not present prior to the assertion ENABLE, the driven FET will be turned on immediately following assertion of  
ENABLE and subsequent application of a voltage on the Drain of the FET will be directly applied to the Source (Diagram 2).  
Again, VCC must have reached VCC-MIN before ENABLE will operate the device. V_Gate will be pulled to VCC after which the  
V_Source will track the voltage applied to the Drain of the FET.  
EN_to_DRAIN  
T_VCC_to_EN  
VCC  
ENABLE  
High True Example  
V_DRAIN  
V_GATE  
V_SOURCE  
DONE*  
T_slew = Drain Slew  
Diagram 2  
1 T_VCC to ENABLE = 100 s assertion delay (when VCC initially ramping up to 100% of VCC).  
2 Enable assertion transition time must be less than 1 s.  
* If V_Drain = 0 V prior to assertion of ENABLE, DONE becomes true co-incident with assertion of ENABLE.  
* In the case of V_DRAIN after ENABLE, the definition of Arrival and Ramp Time are not valid  
000-0055031-102  
Page 6 of 12  

与SLG55031相关器件

型号 品牌 获取价格 描述 数据表
SLG55220-120010 DIALOG

获取价格

2 Rail GreenFETTM High Voltage Gate Driver
SLG55220-120010V DIALOG

获取价格

2 Rail GreenFETTM High Voltage Gate Driver
SLG55220-120010VTR DIALOG

获取价格

2 Rail GreenFETTM High Voltage Gate Driver
SLG55221 RENESAS

获取价格

High Voltage Gate Driver
SLG55221-120010 DIALOG

获取价格

2 Rail GreenFETTM High Voltage Gate Driver
SLG55221-120010V DIALOG

获取价格

2 Rail GreenFETTM High Voltage Gate Driver
SLG55221-120010VTR DIALOG

获取价格

2 Rail GreenFETTM High Voltage Gate Driver
SLG55544 RENESAS

获取价格

USB Charging Port Power Switch and Controller
SLG55550 RENESAS

获取价格

USB Host Charger Identification
SLG55550A RENESAS

获取价格

USB Host Charger Identification