Datasheet > SLD18P10G

SLD18P10G

更新时间： 2024-06-27 12:11:17

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
6页	623K
描述
TO-252

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中文翻译

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数据手册

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SLD18P10G 数据手册

LEAD FREE

RoHS

SLD18P10G

-100V P -Channel MOSFET

Features

General Description

- P-Channel:-100V -18A

This Power MOSFET is produced using Maple semi‘s

advanced Split gate trench MOSFET technology.

This advanced technology has been especially tailored to

minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

R_DS(on)Typ= 90mΩ@V_GS= -10V

R_DS(on)Typ= 100mΩ@V_GS=-4.5V

- Very Low On-resistance RDS(ON)

- LowCrss

- Fast switching

- 100% avalanche tested

- Excellent stability and uniformity

Application

Portable equipment

 Load Switch

 Power Management

D-PAK

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLD18P10G

Units

Drain-Source Voltage

-100

V_DSS

Drain Current

- Continuous (T_C= 25℃)

-18

-12

-72

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

Gate-Source Voltage

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

100

P_D

R _θJC

R _θJA

T_J, T_STG

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

1.75

℃/W

℃

105

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Maple semiconductor co., Ltd

http://www.maplesemi.com

Rev1.0 Apr. 2020

12 3 4 5 6

中文翻译

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