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SL22-HE3/5BT PDF预览

SL22-HE3/5BT

更新时间: 2024-01-02 20:26:49
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 92K
描述
DIODE 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN, Rectifier Diode

SL22-HE3/5BT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:DO-214AA
包装说明:ROHS COMPLIANT, PLASTIC, SMB, 2 PIN针数:2
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1

SL22-HE3/5BT 数据手册

 浏览型号SL22-HE3/5BT的Datasheet PDF文件第2页浏览型号SL22-HE3/5BT的Datasheet PDF文件第3页浏览型号SL22-HE3/5BT的Datasheet PDF文件第4页 
SL22 & SL23  
Vishay General Semiconductor  
Surface Mount Schottky Barrier Rectifier  
FEATURES  
• Low profile package  
• Ideal for automated placement  
• Guardring for overvoltage protection  
• Low power losses, high efficiency  
• Very low forward voltage drop  
• High surge capability  
DO-214AA (SMB)  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 260 °C  
• Solder Dip 260 °C, 40 seconds  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
MAJOR RATINGS AND CHARACTERISTICS  
For use in low voltage high frequency inverters, free-  
wheeling, dc-to-dc converters, and polarity protection  
applications.  
IF(AV)  
VRRM  
IFSM  
2.0 A  
20 V to 30 V  
100 A  
MECHANICAL DATA  
VF  
0.32 V  
Case: DO-214AA (SMB)  
Tj max.  
125 °C  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
SL22  
SL2  
20  
SL23  
SL3  
30  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
V
V
V
A
14  
21  
Maximum DC blocking voltage  
Maximum average forward rectified current at TL (see Fig.1)  
20  
30  
IF(AV)  
2.0  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Voltage rate of change (rated VR)  
Operating junction temperature range  
Storage temperature range  
dv/dt  
TJ  
10000  
V/µs  
°C  
- 55 to + 125  
- 55 to + 150  
TSTG  
°C  
Document Number 88741  
06-Jul-06  
www.vishay.com  
1

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