Datasheet > SG35N12T

SG35N12T

更新时间： 2022-04-06 16:06:49

品牌	Logo	应用领域
SIRECTIFIER		晶体双极型晶体管双极性晶体管栅
页数	文件大小	规格书
2页	119K
描述
绝缘栅双极型晶体管（IGBT）Isolated Gate Bipolar Transistor (IGBTs),IGBT分立器件Discrete IGBTs。

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SG35N12T 数据手册

SG35N12T, SG35N12DT

Discrete IGBTs

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AD

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

G=Gate, C=Collector,

C(TAB)

E=Emitter,TAB=Collector

4.32 5.49 0.170 0.216

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

SG35N12DT

SG35N12T

1.5 2.49 0.087 0.102

Symbol

Test Conditions

Maximum Ratings

Unit

VCES

VCGR

TJ=25^oC to 150^oC

1200

TJ=25^oC to 150^oC; RGE=1 M ;

VGES

VGEM

Continuous

Transient

±20

±30

IC25

IC90

ICM

TC=25^oC

140

TC=90^oC

TC=25^oC, 1 ms

VGE=15V; TVJ=125^oC; RG=47

Clamped inductive load

ICM=90

@ 0.8 VCES

SSOA

(RBSOA)

TC=25^oC

300

-55...+150

150

-55...+150

TJM

Tstg

^oC

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10s

300

^oC

Nm/Ib.in.

Maximum Tab temperature for soldering SMD devices for 10s

260

1.13/10

Mounting torque (M3)

Weight

=25^o

C, unless otherwise specified)

Characteristic Values

Symbol

Test Conditions

Unit

min.

typ.

max.

BV^CES

=1mA; VGE=0V

=750uA; VCE=VGE

1200

2.5

GE(th)

5.0

250

CES

CE=VCES

GE=0V;

;

=25^o

=125^o

GES

CE=0V; VGE=±20V

=IC90; VGE=15V; T

±100

3.3

CE(sat)

=125^o

2.7

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