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SG25AA40 PDF预览

SG25AA40

更新时间: 2024-01-14 07:59:00
品牌 Logo 应用领域
SANREX /
页数 文件大小 规格书
2页 106K
描述
THYRISTOR MODULE (ISOLATED MOLD TYPE)

SG25AA40 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.72
最大直流栅极触发电流:40 mA最大直流栅极触发电压:3 V
快速连接描述:A-G-K螺丝端子的描述:0
最大维持电流:30 mA最大漏电流:5 mA
通态非重复峰值电流:450 A最大通态电压:1.4 V
最大通态电流:25000 A最高工作温度:125 °C
最低工作温度:-40 °C子类别:Silicon Controlled Rectifiers
触发设备类型:SCRBase Number Matches:1

SG25AA40 数据手册

 浏览型号SG25AA40的Datasheet PDF文件第2页 
ISOLATED MOLD TYPE)  
THYRISTOR MODULE  
SG25AA  
UL:E76102M)  
SG25AA is an isolated molded thyristor which is suitable fora wide range of industrial  
and home electronics uses. SG25AA uses highly relible glass passivation.  
39.2 MAX  
2-φ4.2±0.1  
T(AV)  
I
=25A  
(A�  
high Surge Capability  
Tab terminals for easy wiring.  
(G�  
(K)  
A:TAB250�  
K:TAB250�  
G:TAB187  
20.1 MAX  
21.6 MAX  
30.0±0.1  
13.9  
250  
φ1.65(T1.T1)  
180  
φ1.3(G)  
A
G
K
Unit:  
A
Maximum Ratings  
Ratings  
SG25AA40  
400  
Symbol  
Item  
Unit  
SG25AA20  
200  
SG25AA60  
600  
RRM  
V
Repetitive Peak Reverse Voltage  
Non-Repetitive Peak Reverse Voltage  
Repetitive Peak Off-State Voltage  
V
V
V
RSM  
V
240  
480  
720  
DRM  
V
200  
400  
600  
Symbol  
Item  
Conditions  
Ratings  
25  
Unit  
A
TAV)  
I
Average On-State Current  
R.M.S. On-State Current  
Surge On-State Current  
Single phase, half wave, 180°conduction, Tc70℃  
TRMS)  
I
39  
A
Single phase, half wave, 180°conduction, Tc70℃  
1
TSM  
I
A
cycle, 50Hz/60Hz, peak value, non-repetitive  
450 500  
/
2
2
2
2
I t  
I t  
1040  
10  
A S  
210ms  
GM  
P
Peak Gate Power Dissipation  
Average Gate Power Dissipation  
Peak Gate Current  
W
W
A
GAV)  
P
1
FGM  
I
3
FGM  
V
Peak Gate Voltage(Forward)  
Peak Gate Voltage(Reverse)  
Critical Rate of Rise of On-State Current  
Isolation Breakdown Voltage (R.M.S.)  
Operating Junction Temperature  
Storage Temperature  
10  
V
RGM  
V
5
V
1
G
D
DRM  
G
100  
2500  
didt  
I 100mATj25V =  
2V dI dt1A μs  
A μs  
/
/
/
ISO  
V
A.C.1minute  
V
Tj  
40 to 125  
40 to 125  
Tstg  
N・m  
(㎏fB)  
Mounting TorqueM4)  
Recommended Value 1.0-1.410-14)  
1.515)  
Mass  
23  
g
Electrical Characteristics  
Symbol  
Item  
Conditions  
Ratings  
Unit  
mA  
mA  
V
DRM  
I
Repetitive Peak Off-State Current, max.  
Repetitive Peak Reverse Current, max.  
Peak On-State Voltage, max.  
Gate Trigger Current/Voltage, max.  
Non-Trigger Gate, Voltage. min.  
Turn On Time, max.  
DRM  
5
5
at V , single phase, half wave, Tj125℃  
RRM  
I
DRM  
at V , single phase, half wave, Tj125℃  
On-State Current 78A, Tj25Inst. measurement  
TM  
V
1.40  
GT  
GT  
T
D
I V  
Tj25℃,I 1AV 6V  
40 3  
mA V  
/
/
1
GD  
V
D
DRM  
0.2  
10  
V
Tj125℃,V =/V  
2
1
tgt  
T
G
D
DRM  
G
I 25AI 100mATj25V =  
V
dI dt1A μs  
μs  
/
/
2
2
Critical Rate of Rise of Off-State Voltage, min.  
Holding Current, typ.  
D
DRM  
100  
30  
dvdt  
Tj125, V =/V , Exponential wave.  
V μs  
/
3
H
I
mA  
Tj25℃  
Thermal Impedance, max.  
Junction to case  
1.6  
Rthj-c)  
W  
/
SanRex  
®
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com  

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