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SG25S12DT PDF预览

SG25S12DT

更新时间: 2024-01-05 19:04:19
品牌 Logo 应用领域
SIRECT 双极性晶体管
页数 文件大小 规格书
2页 112K
描述
Discrete IGBTs

SG25S12DT 数据手册

 浏览型号SG25S12DT的Datasheet PDF文件第2页 
SG25S12T, SG25S12DT  
Discrete IGBTs  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
C
G
G=Gate, C=Collector,  
C(TAB)  
E=Emitter,TAB=Collector  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
J
1.0  
1.4 0.040 0.055  
K
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
SG25S12DT  
SG25S12T  
N
1.5 2.49 0.087 0.102  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
VCES  
VCGR  
TJ=25oC to 150oC  
1200  
1200  
V
TJ=25oC to 150oC; RGE=1 M ;  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
A
IC25  
IC90  
TC=25oC  
46  
25  
TC=90oC  
VGE=15V; TVJ=125oC; RG=25  
ICM=48  
@ 0.8 VCES  
SSOA  
(RBSOA)  
A
Clamped inductive load, L=100uH  
PC  
TC=25oC  
313  
W
-55...+150  
150  
-55...+150  
TJ  
TJM  
Tstg  
oC  
oC  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10s  
260  
Md  
Mounting torque (M3)  
1.13/10  
6
Nm/Ib.in.  
g
Weight  
(T  
J
=25o  
C, unless otherwise specified)  
Characteristic Values  
Symbol  
Test Conditions  
Unit  
min.  
typ.  
max.  
BVCES  
I
I
C
=1500uA; VGE=0V  
=1000uA; VCE=VGE  
1200  
3.0  
V
V
V
GE(th)  
C
4.0  
5.0  
350  
1.4  
I
CES  
V
V
V
CE=1200V;  
GE=0V;  
T
J
=25o  
=150o  
C
uA  
mA  
nA  
V
T
J
C
I
GES  
CE=0V; VGE=±20V  
=IC90; VGE=15V  
±100  
2.35  
CE(sat)  
I
C
V

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