Datasheet > SFF1004GD

SFF1004GD

更新时间： 2022-02-26 10:09:13

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	641K
描述
10.0 Ampere Insulated Doubler Polarity Super Fast Recovery Rectifiers

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SFF1004GD 数据手册

SFF1001GD thru SFF1008GD

Pb Free Plating Product

10.0 Ampere Insulated Doubler Polarity Super Fast Recovery Rectifiers

ITO-220AB

Unit : inch (mm)

Features

ꢀ

Super fast switching for high efficiency

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

.130(3.3)

.114(2.9)

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Car Audio Amplifiers and Sound Device Systems

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 1.95 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "GD" Suffix "GS"

Series

Negative

Common Cathode Common Anode

Suffix "G" Suffix "GA"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise noted)

SFF SFF SFF SFF SFF SFF

SYMBOL 1001 1002 1003 1004 1005 1006 1007 1008 UNIT

SFF

PARAMETER

100

150

105

150

200

140

200

300

210

300

400

280

400

500

350

500

600

420

600

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

I_FSM

V_F

I_R

125

Maximum instantaneous forward voltage (Note 1)

I_F= 5A

0.975

1.3

1.7

T_J=25°C

Maximum reverse current @ rated V_R

T_J=125°C

400

μA

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical thermal resistance

t_rr

C_J

R_θJC

T_J

°C/W

°C

Operating junction temperature range

Storage temperature range

- 55 to +150

T_STG

°C

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: I_F=0.5A, I_R=1.0A, I_RR=0.25A.

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V DC.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

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