Datasheet > SF55G

SF55G

更新时间： 2024-09-29 12:04:31

品牌	Logo	应用领域
亞昕 - YEASHIN		二极管超快速恢复二极管
页数	文件大小	规格书
2页	57K
描述
SUPE RFAST RECOVERY RECTIFIERS VOLTAGE- 50 to 8 00 Volts CURRENT - 5.0 Amperes

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SF55G 数据手册

DATA SHEET

SF51G~SF58G

SEMICONDUCTOR

SUPERFAST RECOVERY RECTIFIERS

VOLTAGE- 50 to 800 Volts CURRENT - 5.0 Amperes

FEATURES

• Superfast recovery times-epitaxial construction.

• Low forward voltage, high current capability.

• Exceeds environmental standards of MIL-S-19500/228.

• Hermetically sealed.

DO-201AD Unit:inch(mm)

.210 (5.3)

.188 (4.8)

• Low leakage.

1.0 (25.4)

MIN.

• High surge capability.

DIA.

• Plastic package has Underwriters Laboratories

Flammability Classification 94V-O utilizing

Flame Retardant Epoxy Molding Compound.

.375 (9.5)

.285 (7.2)

°C

• High temperature soldering : 260 /10 seconds at terminals

• Pb free product at available : 99% Sn above meet RoHS

environment substance directive request

MECHANICAL DATA

1.0 (25.4)

MIN.

.052 (1.3)

.048 (1.2)

DIA.

• Case: Molded plastic, DO-201AD

• Terminals: Axial leads, solderable to MIL-STD-202,Method 208

• Polarity: Color Band denotes cathode end

• Mounting Position: Any

• Weight: 0.04 ounce, 1.12 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified.

Resistive or inductive load, 60Hz.

SF51G

SF52G

100

SF53G

150

SF54G

SF55G

300

SF56G

400

SF57G

600

SF58G UNITS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

200

140

200

800

640

800

105

210

320

420

Maximum DC Blocking Voltage

100

150

300

400

600

Maximum Average Forward Current .375"(9.5mm)

lead length at TA=55°C J

5.0

Peak Forward Surge Current, IFM (surge):8.3ms single

halfsine-wave superimposed on rated load(JEDEC method)

Maximum Forward Voltage at 5.0A DC

Maximum DC Reverse Current at Rated DC Blocking Voltage

TA=125°C

150.0

0.95

1.25

1.70

5.0

µA

300

µA

Maximum Reverse Recovery Time(Note 1)

Typical Junction capacitance (Note 2)

35.0

Typical Junction Resistance(Note 3) RθJA

Operating and Storage Temperature Range TJ

°C/W

°C

-55 to +150

NOTES:

1. Reverse Recovery Test Conditions: IF=.5A, IR=1A, Irr=.25A

2. Measured at 1 MHz and applied reverse voltage of 4.0 VDC

3. Thermal resistance from junction to ambient and from junction to lead length 0.375"(9.5mm) P.C.B. mounted

http://www.yeashin.com

REV.02 20110725

中文翻译

下载PDF

与SF55G相关器件

型号	品牌	获取价格	描述	数据表
SF55G-AP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
SF55G-AP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
SF55G-B	MCC	获取价格	Rectifier Diode,
SF55G-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
SF55G-BP-HF	MCC	获取价格	暂无描述
SF55GD1	YANGJIE	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD, DO-27, 2 PIN
SF55GP	MCC	获取价格	DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD, DO-201AD, 2 PIN, Rectifier Diode
SF55G-TP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, P
SF55G-TP-HF	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,
SF55H31	RECTRON	获取价格	Rectifier Diode, 1 Phase, 1 Element, 5A, 300V V(RRM), Silicon, DO-201AD,

与SF55G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

27
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

23
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

22
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

35

产品中心

服务支持

精选活动

关于我们

帮助中心

SF55G

SF55G 数据手册

与SF55G相关器件

与SF55G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SF55G

SF55G 数据手册

与SF55G相关器件

与SF55G相关文章

您还可以找

您在本页遇到什么问题？