DATA SHEET
SEMICONDUCTOR
SF1AS THRU SF1JS
SURFACE MOUNT REVERSE VOLTAGE - 50 to 600 Volts
: Halogen Free
H
SUPER FAST RECTIFIERS FORWARD CURRENT - 1.0 Ampere
: Pb Free
FEATURES
SOD-123S Unit:inch(mm)
‧ Glass passivated chip
‧ Super fast switching for high efficiency
‧ For surface mounted applications
‧ Low forward voltage drop and high current capability
‧ Low reverse leakage current
0.112(2.85)
0.100(2.55)
‧ Plastic material has UL flammability classification 94V-0
‧ High temperature soldering : 260OC / 10 seconds at terminals
‧ Pb free product at available : 99% Sn above meet RoHS environment
substance directive request
0.047(1.20)
MAX
0.152(3.85)
0.140(3.55)
MECHANICAL DATA
‧ Case : Molded plastic
‧ Polarity : Indicated by cathode band
‧ Weight :0.01 grams
0.014(0.35)
MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SYMBOLS SF1AS SF1BS SF1CS SF1DS SF1ES SF1GS SF1JS UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
600
420
600
Volts
Volts
Volts
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current,
at TL=120℃
Volts
1.0
Amps
Peak Forward Surge Current 8.3ms single half
sinewave superimposed on rated load(JEDEC method)
Maximum Instantaneous Forward Voltage at 1.0A
IFSM
VF
30.0
Amps
Volts
uA
0.95
1.25
1.7
Maximum DC Reverse Current TA=25O
5.0
100
C
IR
At Rated DC Blocking Voltage TA=100O
C
TRR
Cj
Maximum Reverse Recovery Time (Note 1)
Typical Junction capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Operating and Storage Temperature Range
NOTES:
35.0
nS
10.0
pF
O
35
/W
C
OC
RθJA
TSTG
-55to +150
1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, Irr=0.25A
2. Measured at 1 MHz and Applied reverse voltage of 4.0 volts
(.013mm thick) land areas
3. 8.0mm2
http://www.yeashin.com
1
REV.02 20110725