Datasheet > SE8D30D

SE8D30D

更新时间： 2023-12-06 20:08:44

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	110K
描述
Surface-Mount Standard Rectifier

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数据手册

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SE8D30D 数据手册

SE8D30D, SE8D30G, SE8D30J

www.vishay.com

Vishay General Semiconductor

Surface-Mount Standard Rectifier

FEATURES

eSMP Series

• Low-profile package

• Meets MSL level 1, per J-STD-020,

LF maximum peak of 260 °C

• AEC-Q101 qualified available

- Automotive ordering code: base P/NHM3

• Compatible to SOD-128 package case outline

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

Bottom View

SlimSMAW (DO-221AD)

TYPICAL APPLICATIONS

Cathode

Anode

General purpose, power line polarity protection and

rail-to-rail protection in consumer, industrial, and

automotive applications.

LINKS TO ADDITIONAL RESOURCES

3D Models

MECHANICAL DATA

Case: SlimSMAW (DO-221AD)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS-compliant

PRIMARY CHARACTERISTICS

I_F(AV)

3 A

Base P/NHM3

- halogen-free, RoHS-compliant, and

V_RRM

I_FSM

200 V to 600 V

AEC-Q101 qualified

40 A

0.86 V

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

V_Fat I_F= 3 A (T_J= 125 °C)

T_Jmax.

175 °C

M3 and HM3 suffix meet JESD 201 class 2 whisker test

Package

SlimSMAW (DO-221AD)

Single

Polarity: color band denotes cathode end

Circuit configuration

MAXIMUM RATINGS (T_A= 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SE8D30D

SD3D

SE8D30G

SD3G

400

SE8D30J

SD3J

UNIT

Device marking code

Maximum repetitive peak reverse voltage

V_RRM

200

600

(1)

I_F(AV)

Maximum average forward rectified current (fig.1)

(2)

I_F(AV)

1.5

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

(3)

Operating junction temperature range

Storage temperature range

T_J

-55 to +175

°C

T_STG

Notes

(1)

(2)

(3)

Mounted on 30 mm x 30 mm pad areas aluminum PCB

Free air, mounted on recommended copper pad area

The heat generated must be less than the thermal conductivity from junction-to-ambient: dP_D/dT_J< 1/R_θJA

Revision: 25-Oct-2022

Document Number: 98270

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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