Datasheet > SDR656DM

SDR656DM

更新时间： 2024-02-01 03:57:06

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	38K
描述
Rectifier Diode,

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中文翻译

获取价格

技术参数
数据手册

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SDR656DM 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

SDR656DM 数据手册

PRELIMINARY

SDR656CTM & Z

SOLID STATE DEVICES, INC.

14005 Stage Road * Santa Fe Springs, Ca 90670

Phone: (562) 404-4474 * Fax: (562) 404-1773

40AMPS

600 VOLTS

1.30

Designer's Data Sheet

30 nsec

HYPER FAST

FEATURES:

CENTERTAP RECTIFIER

• Hyper Fast Recovery: 30nsec Maximum

• High Surge Rating

• Low Reverse Leakage Current

• Low Junction Capacitance

TO-254

TO-254Z

• Hermetically Sealed Package

• Gold Eutectic Die Attach Available

• Ultrasonic Aluminum Wire Bonds

• CommonAnode and Doubler VersionsAvailable

• TX, TXV and Space Level Screening Available

SYMBOL

VALUE

600

UNITS

Maximum Ratings

Peak Repetitive Reverse and

DC Blocking Voltage

RRM

Volts

RWM

SDR656CTM & Z

Average Rectified Forward Current.

Amps

(Resistive load, 60Hz, Sine Wave, T = 25^oC) 1/

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, T = 25^oC) 2/

200

Amps

^oC

FSM

Operating and Storage Temperature

-65 TO +175

& T

STG

Maximum Thermal Resistance

Junction to Case, each individual diode

Junction to Case, 1/

2.0

1.0

^oC/W

θJC

1/ Both legs tied together

2/ Per leg

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0028A

中文翻译

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