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SDR646CAZTXV PDF预览

SDR646CAZTXV

更新时间: 2024-01-29 15:11:10
品牌 Logo 应用领域
SSDI 超快恢复二极管快速恢复二极管局域网
页数 文件大小 规格书
3页 130K
描述
Rectifier Diode, 1 Phase, 2 Element, 40A, 600V V(RRM), Silicon, TO-254, HERMETIC SEALED, TO-254Z, 3 PIN

SDR646CAZTXV 技术参数

生命周期:Active零件包装代码:TO-254
包装说明:HERMETIC SEALED, TO-254Z, 3 PIN针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.25
应用:ULTRA FAST RECOVERY配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-254JESD-30 代码:S-XSFM-P3
最大非重复峰值正向电流:400 A元件数量:2
相数:1端子数量:3
最大输出电流:40 A封装主体材料:UNSPECIFIED
封装形状:SQUARE封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:600 V
最大反向恢复时间:0.06 µs表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
Base Number Matches:1

SDR646CAZTXV 数据手册

 浏览型号SDR646CAZTXV的Datasheet PDF文件第2页浏览型号SDR646CAZTXV的Datasheet PDF文件第3页 
SDR646CTM, Z, & J  
thru  
SDR647CTM, Z, & J  
Solid State Devices, Inc.  
14701 Firestone Blvd * La Mirada, Ca 90638  
Phone: (562) 404-4474 * Fax: (562) 404-1773  
ssdi@ssdi-power.com * www.ssdi-power.com  
DESIGNER’S DATA SHEET  
Part Number / Ordering Information 1/  
40 Amp  
ULTRAFAST  
CENTERTAP RECTIFIER  
600-700 Volts  
SDR64 __ CT __ __  
Screening2/  
__ = Not Screened  
TX = TX Level  
TXV = TXV  
S = S Level  
60 nsec  
Package  
M = TO-254  
Z = TO-254Z  
J = TO-257  
Features:  
Ultrafast Recovery: 60nsec Maximum  
High Surge Rating  
Centertap – Common Cathode  
Low Reverse Leakage Current  
Low Junction Capacitance  
Hermetically Sealed Package  
Also Available in the following configurations:  
Common Anode: SDR646CAM, CAZ, & CAJ  
SDR647CAM, CAZ, & CAJ  
Voltage 6 = 600 V  
7 = 700 V  
TX, TXV and Space Level Screening  
Available2/  
Maximum Ratings  
Symbol  
Value  
Units  
VRRM  
VRWM  
VR  
SDR646  
SDR647  
600  
700  
Peak Repetitive Reverse Voltage  
Volts  
Average Rectified Forward Current  
Io  
40  
Amps  
(Resistive Load, 60 Hz Sine Wave, TC = 25°C)3/  
Peak Surge Current  
IFSM  
400  
Amps  
ºC  
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C)3/  
Operating & Storage Temperature  
Maximum Total Thermal Resistance  
T
OP & TSTG  
RθJC  
-65 to +200  
Junction to Case3/  
Junction to Case4/  
2.0  
3.5  
ºC/W  
TO-254 (M)  
TO-254Z (Z)  
TO-257 (J)  
NOTE: All specifications are subject to change without notification.  
SCD's for these devices should be reviewed by SSDI prior to release.  
DATA SHEET #: RU0089F  
DOC  

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