Datasheet > SD1019_1

SD1019_1

更新时间： 2022-10-27 09:22:13

品牌	Logo	应用领域
美高森美 - MICROSEMI		晶体射频和微波晶体管
页数	文件大小	规格书
4页	108K
描述
RF AND MICROWAVE TRANSISTORS VHF APPLICATIONS

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SD1019_1 数据手册

SD1019

RF AND MICROWAVE TRANSISTORS

VHF APPLICATIONS

Features

•

136 MHz

13.5 V

COMMON EMITTER

P_OUT= 30 W MIN.

GAIN = 4.5 dB

DESCRIPTION:

The SD1019 is a 28 V Class C epitaxial silicon NPN planar transistor

designed primarily for VHF communications.

It uses nichrome aluminum metallization to achieve infinite VSWR at

rated operating conditions.

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)

Symbol

V_CBO

Parameter

Value

Unit

Collector-Base Voltage

V_CEO

V_EBO

I_C

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

P_DISS

T_stg

T_j

Total Power Dissipation

Storage Temperature

Junction Temperature

117

°C

-65 to +150

+200

THERMAL DATA

R_TH(j-c)

Junction-Case Thermal Resistance

1.7

°C/W

Rev. B – June 2008

Microsemi reserves the right to change, without notice, the specifications and information contained herein.

Visit our web site at www.microsemi.com or contact our factory direct.

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