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SBTB30120VCT PDF预览

SBTB30120VCT

更新时间: 2024-10-01 17:00:43
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 491K
描述
30A,120V,Schottky Barrier Rectifiers

SBTB30120VCT 数据手册

 浏览型号SBTB30120VCT的Datasheet PDF文件第2页浏览型号SBTB30120VCT的Datasheet PDF文件第3页浏览型号SBTB30120VCT的Datasheet PDF文件第4页 
Trench MOS Schottky Barrier Rectifiers  
SBT30120VCT SBTF30120VCT SBTB30120VCT  
Features  
Pb  
Lead-free  
Low Forward Voltage Drop.  
Excellent High Temperature Stability.  
Super Barrier Design.  
SBT30120VCT  
TO-220AB  
SBTF30120VCT  
ITO-220AB  
Soft, Fast Switching Capability.  
Typical Applications  
Device optimized for low forward voltage drop to maximize  
efficiency in Power Supply applications.  
SBTB30120VCT  
TO-263  
Mechanical Data  
Case: TO-220ABITO-220ABTO-263.  
Molding compound, UL flammability classification rating  
94V-0.  
Terminals: Matte tin plated leads, solderable per  
MIL-STD-202, Method 208.  
Ordering Information  
Part Number  
Package  
Shipping  
Marking Code  
SBT30120VCT□  
SBTF30120VCT□  
TO-220AB  
ITO-220AB  
TO-263  
50/Tube  
SBT30120VCT  
SBTF30120VCT  
SBTB30120VCT  
50/Tube  
50/Tube or 800/Tape Reel  
SBTB30120VCT□  
: none is for Lead Free package;  
“G” is for Halogen Free package.  
Maximum Ratings(@TA=25unless otherwise specified)  
Characteristic  
Symbol  
Value  
Units  
Peak repetitive reverse voltage  
VRRM  
VRM  
VRWM  
IO  
120  
120  
120  
30  
V
DC Blocking Voltage  
Working Peak Reverse Voltage  
V
A
A
A
Average Rectified Forward CurrentPer device  
Peak Repetitive Reverse Surge Current (2uS-1Khz)  
Peak forward surge current,8.3ms singlehalf-sine-wave  
Non-repetitive avalanche energy at  
IRRM  
IFSM  
1
200  
EAS  
250  
mJ  
TJ=25°C,L=10mH,I=7.5A, per diode  
Thermal Characteristics  
Parameter  
Symbol  
R ΘJC  
TJ  
SBT30120VCT  
SBTF30120VCT  
SBTB30120VCT  
Units  
°C /W  
°C  
Typical thermal resistance per leg  
Operating junction temperature range  
Storage temperature range  
2
4
3
150  
TSTG  
-65 to +150  
°C  
SKM0065A  
www.gmesemi.com  
1

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