CURRENT 10.0Amperes
VOLTAGE 20 to 60 Volts
SBR1020 THRU SBR1060
Features
· Plastic Package has Underwriters Laboratory
Flammability Classification 94V-0
TO-220A
· Metal silicon junction, majority carrier conduction
· Guard ring for overvoltage protection
· Low power loss, high efficiency
· High current capability, Low forward voltage drop
· Single rectifier construction
· High surge capability
· For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
· High temperature soldering guaranteed :
250℃/10 seconds, 0.25" (6.35mm) from case
.180
HOLE THRU (4.6)
f
3.8 +.2
.412
.050
(1.27)
(10.5)
MAX.
.108
(2.75)
.248
(6.3)
.595
(15.1)
.040
(1.0)
MAX.
MAX.
.550
.051
(1.3)
.040
(1.0)
MAX.
MAX.
(14.0)
.158
(4.0)
MAX.
MIN.
.200
(5.08)
Mechanical Data
.120
(3.05)
+
PIN 1
PIN 2
PIN 1
PIN 2
+
· Case : JEDEC TO-220 molded plastic body
· Terminals : Lead solderable per
MIL-STD-750, Method 2026
· Polarity : As marked
· Mounting Position : Any
· Weight : 0.08ounce, 2.24 grams
+
CASE
CASE
Case Positive
Case Negative
Suffix "R"
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive
load. For capacitive load, derate by 20%)
Symbols
SBR1020 SBR1030 SBR1040
SBR1050
SBR1060 Units
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
RRM
RMS
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
Volts
Volts
Volts
Maximum DC blocking Voltage
VDC
Maximum average forward rectified current
(see Fig. 1)
I(AV
)
10.0
20.0
Amps
Amps
Repetitive peak forward current(square wavr,
20KHZ) at Tc=105℃
IFRM
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method)
IFSM
150.0
Amps
Maximum instantaneous forward voltage
at 10A (Note 1)
V
F
0.70
0.80
Volts
mA
Maximum instantaneous reverse
current at rated DC blocking
voltage (Note1)
T
T
A
A
=25℃
1.0
IR
=125℃
30
2.5
Typical thermal resistance (Note 2)
Operating junction temperature range
Storage temperature range
RθJC
℃/W
℃
T
J
-65 to +150
-65 to +150
℃
T
STG
Notes:
(1) Pulse test: 300μS pulse width, 1% duty cycle
(2) Thermal resistance from junction to case