Datasheet > SBL6045PT

SBL6045PT

更新时间： 2024-09-30 00:02:03

品牌	Logo	应用领域
SIRECTIFIER		二极管
页数	文件大小	规格书
2页	121K
描述
肖特基势垒二极管Schottky Barrier Diodes，低压降肖特基势垒二极管Low VF Schottky Barrier Diodes，Tj = -40°C ~ +125°C, Tjm = +125°C。

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SBL6045PT 数据手册

SBL6030PT thru SBL6045PT

Low VF Schottky Barrier Rectifiers

Dim.

Millimeter

Min. Max. Min.

Inches

Max.

Dimensions TO-247AD

19.81 20.32 0.780 0.800

20.80 21.46 0.819 0.845

C(TAB)

15.75 16.26 0.610 0.640

3.55 3.65 0.140 0.144

4.32 5.49 0.170 0.216

A=Anode, C=Cathode, TAB=Cathode

5.4

6.2 0.212 0.244

1.65 2.13 0.065 0.084

4.5

0.177

VRRM

VRMS

VDC

1.0

1.4 0.040 0.055

10.8 11.0 0.426 0.433

SBL6030PT

SBL6035PT

SBL6040PT

SBL6045PT

4.7

0.4

5.3 0.185 0.209

0.8 0.016 0.031

1.5 2.49 0.087 0.102

Symbol

Characteristics

Maximum Ratings

Unit

I(AV)

IFSM

Maximum Average Forward Rectified Current @TC=100^oC

Peak Forward Surge Current 8.3ms Single Half-Sine-Wave

Superimposed On Rated Load (JEDEC METHOD)

500

Maximum Forward Voltage At 30A DC

@TJ=25^oC

0.55

Maximum DC Reverse Current

At Rated DC Blocking Voltage

@TJ=25^oC

200

@TJ=100^oC

ROJC

Typical Junction Capacitance Per Element (Note 1)

Typical Thermal Resistance (Note 2)

Operating Temperature Range

1000

0.5

^oC/W

^oC

-55 to +125

-55 to +150

TSTG

Storage Temperature Range

^oC

NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.

2. Thermal Resistance Junction To Case.

FEATURES

MECHANICAL DATA

* Metal of silicon rectifier, majority carrier conducton

* Guard ring for transient protection

* Low power loss, high efficiency

* High current capability, low VF

* Case: TO-247AD molded plastic

* Polarity: As marked on the body

* Weight: 0.2 ounces, 5.6 grams

* Mounting position: Any

* High surge capacity

* For use in low voltage, high frequency inverters, free

whelling, and polarity protection applications

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