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SBL1630CT PDF预览

SBL1630CT

更新时间: 2024-02-05 21:44:16
品牌 Logo 应用领域
SIRECTIFIER 二极管
页数 文件大小 规格书
2页 103K
描述
肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ +125°C, Tjm = +125°C。

SBL1630CT 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-3P
包装说明:ROHS COMPLIANT, PLASTIC, TO-3P, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80Factory Lead Time:8 weeks
风险等级:5.53Is Samacsys:N
其他特性:LOW POWER LOSS, FREE WHEELING, HIGH SURGE CAPABILITY应用:EFFICIENCY
外壳连接:CATHODE配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.55 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:250 A
元件数量:2相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:16 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
认证状态:Not Qualified最大重复峰值反向电压:30 V
子类别:Rectifier Diodes表面贴装:NO
技术:SCHOTTKY端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40Base Number Matches:1

SBL1630CT 数据手册

 浏览型号SBL1630CT的Datasheet PDF文件第2页 
SBL1630CT thru SBL1645CT  
Low VF Schottky Barrier Rectifiers  
Dimensions TO-220AB  
Dim.  
Inches  
Min. Max.  
Milimeter  
Min. Max.  
A
C
A
A
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
0.500 0.550  
0.580 0.630  
0.390 0.420  
0.139 0.161  
0.230 0.270  
0.100 0.125  
0.045 0.065  
0.110 0.230  
0.025 0.040  
12.70 13.97  
14.73 16.00  
9.91 10.66  
C
C(TAB)  
A
3.54  
5.85  
2.54  
1.15  
2.79  
0.64  
2.54  
4.32  
1.14  
0.35  
2.29  
4.08  
6.85  
3.18  
1.65  
5.84  
1.01  
BSC  
4.82  
1.39  
0.56  
2.79  
A=Anode, C=Cathode, TAB=Cathode  
VRRM  
V
VRMS  
V
VDC  
V
SBL1630CT  
SBL1635CT  
SBL1640CT  
SBL1645CT  
30  
21  
30  
35  
40  
45  
0.100  
BSC  
0.170 0.190  
0.045 0.055  
0.014 0.022  
0.090 0.110  
35  
24.5  
28  
40  
45  
31.5  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
VF  
Maximum Average Forward Rectified Current @TC=95oC  
16  
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
250  
A
V
Maximum Forward Voltage At 8.0A DC (Note 1)  
0.55  
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
0.5  
50  
IR  
mA  
@TJ=100oC  
CJ  
ROJC  
TJ  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
350  
pF  
oC/W  
oC  
2.5  
-55 to +125  
-55 to +150  
TSTG  
oC  
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.  
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-220AB molded plastic  
* Polarity: As marked on the body  
* Weight: 0.08 ounces, 2.24 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  

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