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SBL1630CT-B PDF预览

SBL1630CT-B

更新时间: 2024-09-29 08:50:15
品牌 Logo 应用领域
美微科 - MCC /
页数 文件大小 规格书
3页 378K
描述
Rectifier Diode

SBL1630CT-B 数据手册

 浏览型号SBL1630CT-B的Datasheet PDF文件第2页浏览型号SBL1630CT-B的Datasheet PDF文件第3页 
M C C  
SBL1620CT  
THRU  
SBL1660CT  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
Metal of silicon rectifier, majority carrier conduction  
High current capability, low VF  
Marking:Type  
Number  
16 Amp Schottky  
Barrier Rectifier  
20 to 60 Volts  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
Maximum Ratings  
Operating Temperature: -55to +125℃  
Storage Temperature: -55to +150℃  
For capacitive load, derate current by 20%  
TO-220AB  
B
L
M
Maximum  
Recurrent  
Part Number Peak Reverse  
Voltage  
C
Maximum  
RMS  
Voltage  
Maximum DC  
Blocking  
D
MCC  
A
K
Voltage  
E
F
PIN  
SBL1620CT  
SBL1630CT  
SBL1635CT  
SBL1640CT  
SBL1645CT  
SBL1650CT  
SBL1660CT  
20V  
30V  
35V  
40V  
45V  
50V  
60V  
14V  
21V  
24.5V  
28V  
31.5V  
35V  
42V  
20V  
30V  
35V  
40V  
45V  
50V  
60V  
1
3
G
I
J
N
Electrical Characteristics @ 25°C Unless Otherwise Specified  
H
H
Average Forward  
Current  
TC = 95℃  
IF(AV)  
16A  
PIN 1  
PIN 3  
PIN 2  
CASE  
Peak Forward Surge  
Current  
IFSM  
250A  
8.3ms, half sine  
Maximum  
Instantaneous  
Forward Voltage  
SBL1620CT-1645CT  
SBL1650CT-1660CT  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢀ ꢀ ꢀ ꢀ  
I
FM =8A;  
VF  
0.55V  
0.70V  
INCHES  
MM  
ꢁꢂꢃ  
A
B
C
D
E
ꢃꢂꢄ  
.560  
.380  
.100  
.230  
.380  
ꢃꢅꢆ  
ꢃꢂꢄ  
14.22  
9.65  
ꢃꢅꢆ  
15.88  
10.67  
3.43  
6.86  
10.67  
ꢄꢇꢈꢉ  
TC = 25℃  
.625  
.420  
.135  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
2.54  
0.5mA TJ = 25℃  
.270  
.420  
5.84  
9.65  
IR  
50mA  
TJ = 100℃  
F
G
------  
.500  
.250  
.580  
------  
12.70  
6.35  
14.73  
Typical Junction  
Capacitance  
Measured at  
350pF  
H
I
J
.090  
.020  
.012  
.110  
.045  
.025  
2.29  
0.51  
0.30  
2.79  
1.14  
0.64  
CJ  
1.0MHz, VR=4.0V  
Typical Thermal  
Resistance, Junction  
to Case  
K
L
M
N
.139  
.140  
.045  
.161  
.190  
.055  
3.53  
3.56  
1.14  
4.09  
4.83  
1.40  
R
θJC  
2.5/W  
.080  
.115  
2.03  
2.92  
Pulse Test: Pulse width 300 µsec, Duty cycle 2%.  
www.mccsemi.com  
Revision: 2  
2006/05/31  
1 of 3  

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