Datasheet > SB3H90_08

SB3H90_08

更新时间： 2024-01-19 20:05:03

品牌	Logo	应用领域
威世 - VISHAY		高压
页数	文件大小	规格书
4页	97K
描述
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SB3H90_08 数据手册

New Product

SB3H90 & SB3H100

Vishay General Semiconductor

High-Voltage Schottky Rectifier

High Barrier Technology for Improved High Temperature Performance

FEATURES

• Guardring for overvoltage protection

• Low power losses and high efficiency

• Low forward voltage drop

• Low leakage current

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

DO-201AD

TYPICAL APPLICATIONS

For use in middle voltage high frequency

inverters, freewheeling, dc-to-dc converters, and

polarity protection applications.

PRIMARY CHARACTERISTICS

MECHANICAL DATA

Case: DO-201AD

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

I_F(AV)

3.0 A

V_RRM

I_FSM

V_F

90 V, 100 V

100 A

0.65 V

I_R

20 µA

T_Jmax.

175 °C

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SB3H90

SB3H100

100

UNIT

Maximum repetitive peak reverse voltage

Maximum working reverse voltage

Maximum DC blocking voltage

V_RRM

V_RWM

V_DC

100

Maximum average forward rectified current at T_L= 90 °C

I_F(AV)

3.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

100

Peak repetitive reverse surge current at t_p= 2.0 µs, 1 kHz

Critical rate of rise of reverse voltage

I_RRM

dV/dt

T_STG

T_J

1.0

V/µs

°C

10 000

Storage temperature range

- 55 to + 175

175

Maximum operating junction temperature

°C

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

SB3H90

SB3H100

UNIT

Maximum instantaneous forward

voltage

I_F= 3.0 A

T_J= 25 °C

T_J= 125 °C

0.80

0.65

V_F

(1)

4.0

Maximum reverse current

at rated V_R

T_J= 25 °C

T_J= 125 °C

µA

I_R

(2)

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≤ 40 ms

Document Number: 88720

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

中文翻译

下载PDF

与SB3H90_08相关器件

型号	品牌	获取价格	描述	数据表
SB3H90_11	VISHAY	获取价格	High-Voltage Schottky Rectifier
SB3H90_15	VISHAY	获取价格	High Voltage Schottky Plastic Rectifier
SB3H90E3	VISHAY	获取价格	DIODE 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifi
SB3H90-E3	VISHAY	获取价格	DIODE 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
SB3H90-E3/51	VISHAY	获取价格	Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 90V V(RRM), Silicon, DO-201AD, ROHS COM
SB3H90-E3/54	VISHAY	获取价格	DIODE 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Re
SB3H90HE3	VISHAY	获取价格	DIODE 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifi
SB3H90-HE3/73	VISHAY	获取价格	3A, 90V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
SB3HOETR	GREATECS	获取价格	8.8 mm Horizontal Slide Switches
SB3HONTR	GREATECS	获取价格	8.8 mm Horizontal Slide Switches

与SB3H90_08相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

4
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

3
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

3
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

5

产品中心

服务支持

精选活动

关于我们

帮助中心

SB3H90_08

SB3H90_08 数据手册

与SB3H90_08相关器件

与SB3H90_08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SB3H90_08

SB3H90_08 数据手册

与SB3H90_08相关器件

与SB3H90_08相关文章

您还可以找

您在本页遇到什么问题？