WTE
POWER SEMICONDUCTORS
Pb
SB20150FCT – SB20200FCT
20A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER
Features
ꢀ
Schottky Barrier Chip
B
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Guard Ring for Transient Protection
Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability
Classification 94V-O
ITO-220
Min
C
Dim
A
B
C
D
E
Max
15.40
10.30
2.85
14.60
9.70
G
A
E
2.55
PIN1
2
3
3.56
4.16
D
13.00
0.30
13.80
0.90
F
G
H
I
3.00 Ø
6.30
3.50 Ø
6.90
Mechanical Data
ꢀ
F
Case: ITO-220, Full Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 2.24 grams (approx.)
4.20
4.80
ꢀ
P
J
2.50
2.90
K
L
0.36
0.80
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
I
2.90
3.30
P
2.29
2.79
Mounting Position: Any
H
L
J
All Dimensions in mm
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
PIN 3 -
+
PIN 2
K
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB20150FCT
SB20200FCT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
150
105
200
140
V
RMS Reverse Voltage
VR(RMS)
IO
V
A
Average Rectified Output Current
@TC = 95°C
20
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
IFSM
200
0.92
A
Forward Voltage
@IF = 10A
VFM
IRM
V
Peak Reverse Current
@TA = 25°C
0.5
100
mA
At Rated DC Blocking Voltage
@TA = 100°C
Typical Junction Capacitance (Note 1)
Cj
1100
pF
°C
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB20150FCT – SB20200FCT
1 of 4
© 2008 Won-Top Electronics