CCD area image sensor S9970/S9971 series
ꢀꢀElectrical and optical characteristics (Ta=25 °C, unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
-
Unit
V
Saturation output voltage
Vsat
-
Fw × Sv
Full well
capacity
Vertical
Horizontal
CCD node sensitivity*4
150
300
-
-
-
-
300
600
3.5
200
10
4
150000
75000
-
-
-
-
Fw
Sv
ke
-
µV/e
Dark current*5
(MPP mode)
Readout noise*6
+25 °C
0 °C
3000
-
e /pixel/s
DS
Nr
150
18
-
-
e rms
Line binning
Area scanning
75000
37500
Dynamic range*7
DR
-
-
Spectral response range
Photo response non-uniformity*8
Point defects*9
λ
-
-
-
-
-
400 to 1100
-
10
0
0
0
nm
%
PRNU
-
-
-
-
Cluster defects*10
Column defects*11
Blemish
-
-
*4: VOD=20 V , Load resistance=22 kΩ
*5: Dark current nearly doubles for every 5 to 7 °C increase in temperature.
*6: -40 °C, operating frequency is 80 kHz.
*7: Dynamic range (DR) = Full well capacity / Readout noise
*8: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm)
Fixed pattern noise (peak to peak)
Photo response non-uniformity =
× 100 [%]
Signal
*9: White spots
Pixels that generate dark current higher than 3% of the saturation. (Measured at 0 °C, Ts=1 s)
Black spots
Pixels whose sensitivity is lower than one-half of the average pixel output. (Measured with uniform light producing one-half
of the saturation charge)
*10: 2 to 9 contiguous defective pixels
*11: 10 or more contiguous defective pixels
ꢀꢀSpectral response (without window)*12
ꢀꢀSpectral transmittance characteristics of window material
(Typ. Ta=25 ˚C)
(Typ. Ta=25 ˚C)
100
50
40
30
20
10
0
90
80
Quartz glass
70
AR-coated sapphire
60
Sapphire
50
40
30
20
10
UV-coated
0
100 200 300 400 500 600 700 800 900 1000
200 300 400 500 600 700 800 900 100011001200
Wavelength (nm)
Wavelength (nm)
KMPDB0244EB
KMPDB0310EA
*12: Spectral response with sapphire or AR-coated sapphire is
decreased according to the spectral transmittance charac-
teristic of window material.
3