CCD area image sensor S9970/S9971 series
ꢀꢀAbsolute maximum ratings (Ta=25 °C)
Parameter
Operating temperature
Storage temperature
OD voltage
RD voltage
ISV voltage
ISH voltage
IGV voltage
IGH voltage
SG voltage
OG voltage
RG voltage
TG voltage
Vertical clock voltage
Horizontal clock voltage
Symbol
Topr
Tstg
VOD
VRD
VISV
VISH
VIG1V, VIG2V
VIG1H, VIG2H
VSG
Min.
-50
-50
-0.5
-0.5
-0.5
-0.5
-15
-15
-15
-15
-15
-15
-15
-15
Typ.
Max.
+30
+70
+25
+18
+18
+18
+15
+15
+15
+15
+15
+15
+15
+15
Unit
°C
°C
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VOG
VRG
VTG
V
V
V
V
VP1V, VP2V
VP1H, VP2H
V
ꢀꢀOperating conditions (MPP mode, Ta=25 °C)
Parameter
Output transistor drain voltage
Reset drain voltage
Symbol
VOD
VRD
Min.
18
11.5
1
Typ.
20
12
3
Max.
22
12.5
5
Unit
V
V
Output gate voltage
VOG
V
Substrate voltage
VSS
-
0
-
V
Test point (vertical input source)
Test point (horizontal input source)
Test point (vertical input gate)
Test point (horizontal input gate)
Vertical shift register
clock voltage
VISV
VISH
-
-
VRD
VRD
0
0
4
-8
4
-8
4
-8
4
-8
4
-
-
-
-
6
-7
6
-7
6
-7
6
V
V
V
V
VIG1V, VIG2V
VIG1H, VIG2H
VP1VH, VP2VH
VP1VL, VP2VL
VP1HH, VP2HH
VP1HL, VP2HL
VSGH
-8
-8
0
-9
0
-9
0
-9
0
-9
0
-9
20
High
Low
High
Low
High
Low
High
Low
High
Low
V
V
V
V
Horizontal shift register
clock voltage
Summing gate voltage
Reset gate voltage
VSGL
VRGH
VRGL
VTGH
VTGL
RL
-7
6
-7
24
Transfer gate voltage
V
-8
22
External load resistance
kΩ
ꢀꢀElectrical characteristics (Ta=25 °C)
Parameter
Signal output frequency
Symbol
fc
Min.
-
-
-
-
-
-
-
-
-
-
-
Typ.
0.1
Max.
1
-
-
-
-
-
-
-
Unit
MHz
S9970/S9971-0906
750
1500
3000
6000
100
180
180
180
7
Vertical shift register
capacitance
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
CP1V, CP2V
pF
pF
Horizontal shift register
capacitance
CP1H, CP2H
-
-
-
Summing gate capacitance
Reset gate capacitance
CSG
CRG
pF
pF
7
S9970/S9971-0906
S9970/S9971-1006
S9970/S9971-1007
S9970/S9971-1008
-
-
-
-
60
-
-
-
-
-
18
-
Transfer gate
capacitance
100
100
100
0.99999
15
CTG
pF
Transfer efficiency*2
DC output level
Output impedance
Power dissipation*3
CTE
Vout
Zo
0.99995
-
V
kΩ
mW
12
-
-
5
15
P
-
*2: Charge transfer efficiency per pixel, measured at half of the full well capacity
*3: Power dissipation of the on-chip amplifier plus load resistance
2