Datasheet > S8650

S8650

更新时间： 2024-02-06 19:04:46

品牌	Logo	应用领域
HAMAMATSU		光电二极管光电二极管
页数	文件大小	规格书
2页	85K
描述
Si PIN photodiode Flat surface ideal for bonding to scintillator

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中文翻译

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技术参数
数据手册

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S8650 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	PLASTIC PACKAGE-2	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.59
配置：	SINGLE	最大暗电源：	6 nA
红外线范围：	YES	功能数量：	1
最高工作温度：	60 °C	最低工作温度：	-20 °C
光电设备类型：	PIN PHOTODIODE	峰值波长：	960 nm
最小反向击穿电压：	100 V	形状：	SQUARE
尺寸：	10 mm	Base Number Matches：	1

S8650 数据手册

P H O T O D I O D E

Si PIN photodiode

S8650

Flat surface ideal for bonding to scintillator

S8650 Si PIN photodiode has an epoxy coating window processed to have a flat surface (flatness: ±5 µm). When bonded to a scintillator, the flat

surface allows highly tight coupling to the scintillator so bubbles are unlikely to penetrate in between.

We also accept special orders for machining flat surfaces on other ceramic package products. Feel free to place an order with us.

Features

Applications

Flat epoxy coating surface ideal for bonding to scintillator

Flatness: ±5 µm

Scintillation X-ray detectors

Calorimeters, etc.

Active area: 10 × 10 mm

(Other sizes are also available on request.)

ꢀꢀAbsolute maximum ratings (Ta=25 °C)

Parameter

Reverse voltage

Symbol

Value

Max.100

Unit

Operating temperature

Storage temperature

Topr

Tstg

-20 to +60

-20 to +80

°C

ꢀꢀElectrical and optical characteristics (Ta=25 °C)

Parameter

Spectral response range

Peak sensitivity wavelength

Symbol

Condition

Min.

Typ.

320 to 1100

Max.

Unit

960

λp

A/W

λ=λp

Photo sensitivity

BGO: λ=480 nm

CsI (Tl): λ=540 nm

VR=70 V

Dark current

MHz

R=70 V

λ=780 nm, V

Cut-off frequency

RL=50 Ω, -3 dB

VR=70 V, f=1 MHz

VR=70 V, λ=λp

Terminal capacitance

Noise equivalent power

NEP

3.8 × 10^-14

W/Hz^1/2

中文翻译

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