Datasheet > S6602

S6602

更新时间： 2024-05-23 22:22:36

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
7页	912K
描述
S6602 is an SiC (Silicon Carbide) epitaxial planar type Schottky Barrier Diode. Reducing switching loss, enabling high-speed switching operation. For sale of Bare Die, please contact the specifications in our sales office. Currently, we don't sell Bare Die on the internet distributors now.

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S6602 数据手册

S6602

Datasheet

SiC Schottky Barrier Diode Bare Die

V_R

I_F

1200V

10A

Q_C

36nC

lFeatures

1) Low forward voltage

lInner circuit

2) Negligible recovery time/current

3) Temperature independent switching behavior

4) High surge current capability

lApplications

・ Switch Mode Power Supply

・ Uninterruptible Power Supply

・ Solar Inverter

・ Motor Drive

・ Air Conditioner

・ EV Charger

lAbsolute maximum ratings (T_vj= 25°C unless otherwise specified)

Parameter

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Symbol

V_RM

V_R

Value

1200

Unit

I_F

Continuous forward current

PW=10ms sinusoidal, T_vj=25°C

100

Surge non-

repetitive forward

current

PW=10ms sinusoidal, T_vj=150°C

PW=10ms square, T_vj=25°C

PW=10ms, T_vj=25°C

I_FSM

420

A²s

°C

i²t value

∫i²dt

PW=10ms, T_vj=150°C

T_vj

Virtual junction temperature

Range of storage temperature

175

T_stg

°C

-55 to +175

*1 Limited by maximum T_vj*2 In case of TO-220AC package using alminum wire 400μm in diameter and Z_thJCof 0.76 ˚C/W or less (PW = 10ms).

www.rohm.com

TSQ50015-S6602

1/5

15.Feb.2023 - Rev.003

TSZ22111・14・001

12 3 4 5 6 7

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