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S6695-01 PDF预览

S6695-01

更新时间: 2024-10-30 21:22:31
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
4页 149K
描述
PIN Photodiode, PLASTIC PACKAGE-6

S6695-01 技术参数

生命周期:Obsolete包装说明:PLASTIC PACKAGE-6
Reach Compliance Code:unknownHTS代码:8541.40.60.50
风险等级:5.84其他特性:LOW NOISE
配置:COMMON CATHODE, 4 ELEMENTS最大暗电源:2 nA
红外线范围:YES功能数量:1
最高工作温度:85 °C最低工作温度:-25 °C
光电设备类型:PIN PHOTODIODE峰值波长:900 nm
最小反向击穿电压:20 V形状:RECTANGULAR
尺寸:4.7 mmBase Number Matches:1

S6695-01 数据手册

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P H O T O D I O D E  
Si PIN photodiode  
,
,
,
S7379-01 S6695-01 S6058 S7547  
Quadrant photodiode / plastic package  
These Si PIN photodiodes have a quadrant element molded into clear plastic packages, and feature high sensitivity, low noise and low cross-talk.  
S7547 is specifically developed for violet laser detection, providing greatly improved sensitivity at λ=410 nm.  
Custom-designed devices (with different element shapes, number of elements, characteristics and packages) are also available to meet your  
specific needs. Feel free to contact our sales office.  
Features  
Applications  
Clear plastic package (4 × 4.8 mm)  
High sensitivity  
Signal readout for CD, DVD and MO (Magneto Optical) disc  
Laser beam alignment  
Uniform element characteristic  
Low cross-talk  
Position detection, etc.  
Violet laser detection (S7547)  
Low noise  
Optical disc (DVD, etc.) pickup using violet laser (S7547)  
General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Active  
area  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
Elements gap  
Dimensional  
Reverse voltage  
VR Max.  
Type No.  
outline  
(mm)  
(µm)  
20  
15  
(V)  
(°C)  
(°C)  
S7379-01  
S6695-01  
S6058  
φ1.0/4 element  
2.0 × 2.0/4 element  
20  
-25 to +85  
-40 to +100  
0.6 × 1.2/4 element  
10  
S7547  
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted, per 1 element)  
Cut-off  
frequency  
Temp.  
coefficient  
of  
Terminal  
capacitance  
Ct  
V =10 V  
f=1 MHz  
Peak  
sensitivity  
wavelength  
Spectral  
response  
range  
λ
Dark current  
ID  
VR=10 V  
All elements  
fc  
Photo sensitivity  
S
NEP  
VR=10 V  
VR=10 V  
RL=50 Ω  
λ=830 nm  
D
R
I
Type No.  
λp  
TCID  
=410 nm  
λ
Typ.  
(nA)  
Max.  
(nA)  
λ=λp  
(A/W)  
(nm)  
(nm)  
900  
(times/°C)  
(MHz)  
80  
40 *1  
150 *2  
500 *2  
(pF)  
1
3 *1  
1 *2  
2 *2  
(W/Hz1/2)  
6.5 ×10-15  
(A/W)  
0.19  
0.18  
0.21  
0.27  
S7379-01  
S6695-01  
S6058  
0.55  
0.65  
0.55  
0.5  
0.04  
0.1 *1  
0.04 *2  
0.01 *2  
0.2  
1 *1  
0.2 *2  
0.2 *2  
320 to  
1060  
8.7 ×10-15  
6.5 ×10-15  
3.6 ×10-15  
*
*
*
1
2
2
1.15  
800  
760  
320 to  
1000  
S7547  
*1: VR=5 V  
*2: VR=3 V  
1

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