Datasheet > S5139-01

S5139-01

更新时间： 2024-01-10 11:14:42

品牌	Logo	应用领域
HAMAMATSU		局域网光电
页数	文件大小	规格书
4页	142K
描述
Avalanche Photodiode, TO-18, 3 PIN

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技术参数
数据手册

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S5139-01 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	TO-18, 3 PIN	Reach Compliance Code：	unknown
HTS代码：	8541.40.60.50	风险等级：	5.83
其他特性：	HIGH SENSITIVITY	配置：	SINGLE
最大暗电源：	1 nA	红外线范围：	YES
功能数量：	1	最高工作温度：	85 °C
最低工作温度：	-20 °C	光电设备类型：	AVALANCHE PHOTODIODE
峰值波长：	800 nm	最小反向击穿电压：	80 V
形状：	ROUND	尺寸：	0.5 mm
Base Number Matches：	1

S5139-01 数据手册

P H O T O D I O D E

Si APD

S2381 to S2385 S5139 S8611 S3884, S4315 series

Low bias operation, for 800 nm band

Features

Applications

Stable operation at low bias

High-speed response

Spatial light transmission

Rangefinder

High sensitivity and low noise

ꢀꢀ General ratings / Absolute maximum ratings

Absolute maximum ratings

Dimensional

outline/

Active area *²

Effective active

area

Operating

temperature

Topr

Storage

temperature

Tstg

Type No.

Package

size

Window

material *¹

(mm)

φ0.2

(mm²)

0.03

(°C)

S2381

S2382

S5139

S8611

S2383

S2383-10 *³

S3884

S2384

S2385

ꢀ/K

ꢀ/L

φ0.5

0.19

TO-18

-20 to +85

-55 to +125

ꢀ/K

φ1.0

0.78

ꢀ/K

φ1.5

φ3.0

φ5.0

1.77

7.0

19.6

TO-5

TO-8

ꢀꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)

Breakdown

voltage

VBR

Photo

sensitivity efficiency

Quantum

Excess

Peak

Dark

Cut-off *

Spectral

response

range

Temp.

Terminal

Noise

figure *⁴

Gain

λ=800 nm

sensitivity

wavelength

λp

coefficient current *⁴frequency

capacitance

M=1

RL=50

I =100 µA

Type No.

Ω

λ=800 nm λ=800 nm

λ=800 nm

Typ. Max.

(V) (V)

Typ. Max.

(V/°C) (nA) (nA) (MHz)

(nm)

800

(A/W)

0.5

(%)

(pF)

1.5

S2381

S2382

S5139

S8611

S2383

S2383-10 *³

S3884

S2384

S2385

0.05 0.5

1000

0.1

900

100

400 to 1000

150 200

0.65

0.3

0.2

600

0.5

400

120

*1: Window material K: borosilicate glass, L: lens type borosilicate glass

*2: Active area in which a typical gain can be obtained

*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area

*4: Measured under conditions that the device is operated at the gain listed in the specification table

Note) The following different breakdown voltage ranges are available.

S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)

S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)

12 3 4

中文翻译

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与S5139-01相关器件

型号	品牌	获取价格	描述	数据表
S5139-02	HAMAMATSU	获取价格	Avalanche Photodiode, TO-18, 3 PIN
S5139-03	HAMAMATSU	获取价格	Avalanche Photodiode, TO-18, 3 PIN
S513-93-370-69-129885	MILL-MAX	获取价格	IC Socket, PGA370, 370 Contact(s),
S-513KOHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 13000ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount
S-514.2OHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 14.2ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount,
S-514.3KOHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 14300ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount
S-514.3OHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 14.3ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount,
S-514.5OHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 14.5ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount,
S-514.7KOHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 14700ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount
S-514.7OHM0.01%	VISHAY	获取价格	Fixed Resistor, Wire Wound, 4W, 14.7ohm, 212V, 0.01% +/-Tol, -20,20ppm/Cel, Surface Mount,

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