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S5139-01 PDF预览

S5139-01

更新时间: 2024-01-24 02:24:11
品牌 Logo 应用领域
HAMAMATSU 局域网光电
页数 文件大小 规格书
4页 142K
描述
Avalanche Photodiode, TO-18, 3 PIN

S5139-01 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TO-18, 3 PINReach Compliance Code:unknown
HTS代码:8541.40.60.50风险等级:5.83
其他特性:HIGH SENSITIVITY配置:SINGLE
最大暗电源:1 nA红外线范围:YES
功能数量:1最高工作温度:85 °C
最低工作温度:-20 °C光电设备类型:AVALANCHE PHOTODIODE
峰值波长:800 nm最小反向击穿电压:80 V
形状:ROUND尺寸:0.5 mm
Base Number Matches:1

S5139-01 数据手册

 浏览型号S5139-01的Datasheet PDF文件第2页浏览型号S5139-01的Datasheet PDF文件第3页浏览型号S5139-01的Datasheet PDF文件第4页 
P H O T O D I O D E  
Si APD  
,
,
,
S2381 to S2385 S5139 S8611 S3884, S4315 series  
Low bias operation, for 800 nm band  
Features  
Applications  
Stable operation at low bias  
High-speed response  
Spatial light transmission  
Rangefinder  
High sensitivity and low noise  
ꢀꢀ General ratings / Absolute maximum ratings  
Absolute maximum ratings  
Dimensional  
outline/  
Active area *2  
Effective active  
area  
Operating  
temperature  
Topr  
Storage  
temperature  
Tstg  
Type No.  
Package  
size  
Window  
material *1  
(mm)  
φ0.2  
(mm2)  
0.03  
(°C)  
(°C)  
S2381  
S2382  
S5139  
S8611  
S2383  
S2383-10 *3  
S3884  
S2384  
S2385  
/K  
/L  
/L  
φ0.5  
0.19  
TO-18  
-20 to +85  
-55 to +125  
/K  
φ1.0  
0.78  
/K  
/K  
/K  
φ1.5  
φ3.0  
φ5.0  
1.77  
7.0  
19.6  
TO-5  
TO-8  
ꢀꢀ Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)  
Breakdown  
voltage  
VBR  
Photo  
sensitivity efficiency  
Quantum  
Excess  
4
4
Peak  
Dark  
Cut-off *  
Spectral  
response  
range  
λ
*
Temp.  
4
Terminal  
*
Noise  
figure *4  
x
Gain  
M
λ=800 nm  
sensitivity  
wavelength  
λp  
coefficient current *4 frequency  
capacitance  
S
M=1  
QE  
M=1  
D
I
of  
fc  
RL=50  
D
I =100 µA  
Ct  
Type No.  
V
BR  
λ=800 nm λ=800 nm  
λ=800 nm  
Typ. Max.  
(V) (V)  
Typ. Max.  
(V/°C) (nA) (nA) (MHz)  
(nm)  
(nm)  
800  
(A/W)  
0.5  
(%)  
75  
(pF)  
1.5  
S2381  
S2382  
S5139  
S8611  
S2383  
S2383-10 *3  
S3884  
S2384  
S2385  
0.05 0.5  
1000  
0.1  
1
2
900  
3
100  
400 to 1000  
150 200  
0.65  
0.3  
0.2  
600  
6
0.5  
1
3
5
10  
30  
400  
120  
40  
10  
40  
95  
60  
40  
*1: Window material K: borosilicate glass, L: lens type borosilicate glass  
*2: Active area in which a typical gain can be obtained  
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area  
*4: Measured under conditions that the device is operated at the gain listed in the specification table  
Note) The following different breakdown voltage ranges are available.  
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)  
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)  
1

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