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S3921-512Q PDF预览

S3921-512Q

更新时间: 2024-01-18 17:54:32
品牌 Logo 应用领域
HAMAMATSU 传感器换能器图像传感器
页数 文件大小 规格书
6页 239K
描述
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit

S3921-512Q 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.7
Is Samacsys:N阵列类型:LINEAR
主体宽度:10.16 mm主体高度:3 mm
主体长度或直径:40.6 mm外壳:QUARTZ GLASS
安装特点:THROUGH HOLE MOUNT最高工作温度:65 °C
最低工作温度:-40 °C输出类型:ANALOG VOLTAGE
封装形状/形式:RECTANGULAR传感器/换能器类型:IMAGE SENSOR,NMOS
最大供电电压:10 V最小供电电压:4.5 V
表面贴装:NO端接类型:SOLDER
Base Number Matches:1

S3921-512Q 数据手册

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NMOS linear image sensor S3921/S3924 series  
Hamamatsu provides the following driver circuits and related products (sold separately).  
Product name  
Type No.  
C7885  
Content  
Feature  
Low price  
Single power supply (+15 V) operation  
Boxcar waveform output  
Low cost driver circuit  
Driver circuit  
C7885G  
C7885 + C8225-02  
Pulse generator  
Cable  
C8225-02  
A8226  
C7885 series  
C7883 to C7885 series  
BNC, length 1 m  
Figure 9 Readout circuit example and timing chart  
+5 V  
+5 V  
+
10 k  
Vdd  
Rf  
EOS  
st  
1
st  
1
EOS  
st  
DUMMY  
VIDEO  
OPEN  
Rs 10 kΩ  
1
2
2
2
ACTIVE  
VIDEO  
Reset  
+2.5 V  
Reset  
+
+
Reset V  
(Vscd)  
Vscg  
Vss  
Reset  
Vsub  
+15 V  
NC  
KMPDC0028EA  
KMPDC0027EA  
Anti-blooming function  
If the incident light intensity is higher than the saturation charge level, even partially, a signal charge in excess of the saturation  
charge cannot accumulate in the photodiode. This excessive charge flows out into the video line degrading the signal purity. To  
avoid this problem and maintain the signal purity, applying the same voltage as the Reset V voltage to the saturation control drain  
and grounding the saturation control gate are effective. If the incident light intensity is extremely high, a positive bias should be  
applied to the saturation control gate. The larger the voltage applied to the saturation control gate, the higher the function for  
suppressing the excessive saturation charge will be. However, this voltage also lowers the amount of saturation charge, so an  
optimum bias voltage should be selected.  
Auxiliary functions  
1) All reset  
In normal operation, the accumulated charge in each photodiode is reset when the signal is read out. Besides this method that  
uses the readout line, S3921/S3924 series can reset the photodiode charge by applying a pulse to the saturation control gate.  
The amplitude of this pulse should be equal to the φ1, φ2, φst, Reset φ pulses and the pulse width should be longer than 5 µs.  
When the saturation control gate is set at the Highlevel, all photodiodes are reset to the saturation control drain potential.  
Conversely, when the saturation control gate is set at the Lowlevel (0 V), the signal charge accumulates in each photodiode  
without being reset.  
2) Dummy video  
S3921/S3924 series have a dummy video line. Positive-polarity video signals with the DC offset remove can be obtained by  
differential amplification of the active video line and dummy video line outputs. When not needed, leave this unconnected.  
Precautions for using NMOS linear image sensors  
1) Electrostatic countermeasures  
NMOS linear image sensors are designed to resist static electrical charges. However, take sufficient cautions and countermea-  
sures to prevent damage from static charges when handling the sensors.  
2) Window  
If dust or grime sticks to the surface of the light input window, it appears as a black blemish or smear on the image. Before using  
the image sensor, the window surface should be cleaned. Wipe off the window surface with a soft cloth, cleaning paper or  
cotton swab slightly moistened with organic solvent such as alcohol, and then lightly blow away with compressed air. Do not  
rub the window with dry cloth or cotton swab as this may generate static electricity.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.  
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2005 Hamamatsu Photonics K.K.  
HAMAMATSU PHOTONICS K.K., Solid State Division  
1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com  
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218  
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658  
France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10  
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777  
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01  
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741  
Cat. No. KMPD1044E01  
Oct. 2005 DN  

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