Datasheet > S10456

S10456

更新时间： 2024-01-17 18:55:00

品牌	Logo	应用领域
HAMAMATSU		输出元件光电
页数	文件大小	规格书
4页	326K
描述
Linear Output Photo IC, ROHS COMPLIANT PACKAGE-10

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技术参数
数据手册

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S10456 技术参数

生命周期：	Obsolete	包装说明：	ROHS COMPLIANT PACKAGE-10
Reach Compliance Code：	unknown	风险等级：	8.44
光电设备类型：	LINEAR OUTPUT PHOTO IC	Base Number Matches：	1

S10456 数据手册

Photo IC for laser beam synchronous detection

S10456

Stable timing output with small variations in

propagation delay time

The S10456 photo IC uses a dual-element Si PIN photodiode and compares the two signals to obtain a highly stable out-

put. The S10456 shows small variations in the propagation delay time even when laser power ﬂuctuates, so that stable

timing is output.

Features

Applications

High sensitivity

Current ampliﬁer gain: 20 times

Print start timing detection for laser printers, digital

copiers, fax machines, etc.

Stable timing output (less than ±4 ns) even if input

power varies by more than 4 times

Digital output

Small package

Photosensitive area (PD1: 2.5 × 0.3 mm, PD2: 2.5 × 0.5 mm)

Suitable for lead-free reﬂow (RoHS compliance)

Absolute maximum ratings

Parameter

Supply voltage

Symbol

Vcc

IRO

Topr

Tstg

Tsol

Value

-0.5 to +7

300

-0.5 to +7

Unit

°C

Condition

Ta=25 °C

Power dissipation

Output voltage

Output current

Ro1, Ro2 terminal current

Operating temperature

Storage temperature

-25 to +80

-40 to +85

Reﬂow soldering conditions*²

Peak temperature 240 °C, 1 time

Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the

product within the absolute maximum ratings.

*1: Power dissipation decreases at a rate of 4 mW/°C above Ta=25 °C.

*2: JEDEC level 5a

Electrical and optical characteristics (Ta=25 °C, λ=780 nm, Vcc=5 V, Ro1=Ro2=1.5 k ,

)

Ω unless otherwise noted

Parameter

Current consumption

High level output voltage

Low level output voltage

Threshold input power

Analog amplitude

Propagation delay time variation

Rise time

Fall time

Symbol

Icc

Condition

Min.

Typ.

Max.

0.4

2.4

±4

Unit

μW

PI=0

4.6

1.6

VOH

VOL

PTH

VRO

ΔtP

IOL=4 mA, PI=250 μW

2.0

PI=100 to 400 μW*⁴

200

100

CL=15 pF

Maximum input power

PI max

PTH

*3: Voltage change at Ro2 terminal when irradiated with laser beam of P =150 μW

*4: Beam diameter (1/e²)=55 μm, scan speed=1.18 mm/μs

Not including jitter caused by polygon mirror nonuniformity

www.hamamatsu.com

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