Datasheet > S0500KC25M

S0500KC25M

更新时间： 2024-02-14 00:35:40

品牌	Logo	应用领域
IXYS		栅栅极
页数	文件大小	规格书
15页	319K
描述
Symmetrical GTO SCR, 640A I(T)RMS, 2500V V(DRM), 1000V V(RRM), 1 Element

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数据手册

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S0500KC25M 技术参数

生命周期：	Obsolete	包装说明：	DISK BUTTON, O-CXDB-X4
Reach Compliance Code：	unknown	HTS代码：	8541.30.00.80
风险等级：	5.71	配置：	SINGLE
最大直流栅极触发电流：	2000 mA	JESD-30 代码：	O-CXDB-X4
元件数量：	1	端子数量：	4
封装主体材料：	CERAMIC, METAL-SEALED COFIRED	封装形状：	ROUND
封装形式：	DISK BUTTON	认证状态：	Not Qualified
最大均方根通态电流：	640 A	断态重复峰值电压：	2500 V
重复峰值反向电压：	1000 V	表面贴装：	YES
端子形式：	UNSPECIFIED	端子位置：	UNSPECIFIED
触发设备类型：	SYMMETRICAL GTO SCR	Base Number Matches：	1

S0500KC25M 数据手册

Date:- 26 Jul, 2005

Data Sheet Issue:- 3

WESTCODE

An IXYS Company

Symmetrical Gate Turn-Off Thyristor

Type S0500KC25#

Absolute Maximum Ratings

MAXIMUM

UNITS

VOLTAGE RATINGS

LIMITS

2500

V_DRM

V_RSM

V_RRM

V_RSM

Repetitive peak off-state voltage, (note 1)

Non-repetitive peak off-state voltage, (note 1)

Repetitive peak reverse voltage

2600

100-2000

Non-repetitive peak reverse voltage

MAXIMUM

LIMITS

UNITS

µH

RATINGS

I_TGQM

L_s

Maximum peak turn-off current, (note 2)

Snubber loop inductance, I_TM=I_TGQM, (note 2)

500

0.3

330

640

4.0

7.2

1000

160

100

I_T(AV)M

I_T(RMS)

I_TSM

I_TSM2

I²t

di/dt_cr

P_FGM

P_RGM

I_FGM

V_RGM

t_off

Mean on-state current, T_sink=55°C (note 3)

Nominal RMS on-state current, 25°C (note 3)

Peak non-repetitive surge current t_p=10ms

Peak non-repetitive surge current, (Note 4)

I²t capacity for fusing t_p=10ms

Critical rate of rise of on-state current, (note 5)

Peak forward gate power

Peak reverse gate power

kA²s

A/µs

Peak forward gate current

Peak reverse gate voltage (note 6)

Minimum permissible off-time, I_TM=I_TGQM, (note 2)

Minimum permissible on-time

µs

t_on

T_jop

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) V_GK=-2Volts.

2) T_j=125°C, V_D=80%V_DRM, V_DM<V_DRM, di_GQ/dt=20A/µs, C_S=1µF.

3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.

4) Half-sinewave, t_p=2ms

5) For di/dt>1000A/µs, consult factory.

6) May exceed this value during turn-off avalanche period.

Data Sheet. Type S0500KC25# Issue 3

Page 1 of 15

July, 2005

12 3 4 5 6 7...15

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