Datasheet > RTL020P02FRA

RTL020P02FRA

更新时间： 2023-09-03 20:37:58

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
4页	998K
描述
车载 MOSFET与通用品共用数据表。下订单时，请注意下列型号命名方式，编写为车载型号。

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中文翻译

获取价格

数据手册

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RTL020P02FRA 数据手册

RTLR0T2L00P2002PF0R2A

Transistors

AEC-Q101 Qualified

2.5V Drive Pch MOSFET

RTL020P02FRA

0P02

zDimensions (Unit : mm)

zStructure

Silicon P-channel

MOSFET

TUMT6

zFeatures

1) Low on-resistance. (180mΩ at 2.5V)

2) High power package.

3) High speed switching.

4) Low voltage drive. (2.5V)

Abbreviated symbol : WU

zApplications

DC-DC converter

zPackaging specifications

zEquivalent circuit

Package

Code

Taping

(6)

(5)

(4)

Type

Quantity (pcs)

3000

∗2

RTL020P02

RTL020P02FRA

∗1

(1) Drain

(2) Drain

(3) Gate

(4) Source

(5) Drain

(6) Drain

(1)

(2)

(3)

∗1 ESD PROTECTION DIODE

∗2 BODY DIODE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

V_DSS

V_GSS

I_D

Limits

−20

Unit

Continuous

Drain current

Pulsed

∗1

I_DP

Source current

(Body diode)

Continuous

I_S

−0.8

−8

∗1

∗2

Pulsed

I_SP

Total power dissipation

Channel temperature

P_D

°C

Tch

Tstg

150

Range of Storage temperature

∗1 Pw≤10µs, Duty cycle≤1%

∗2 Mounted on a ceramic board

−55 to +150

zThermal resistance

Parameter

Symbol

Rth(ch-a) ^∗

Limits

125

Unit

Channel to ambient

∗ Mounted on a ceramic board.

°C / W

20190527-Rev.C 1/4

12 3 4

中文翻译

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