RSX048LAP2S
Schottky Barrier Diode
Data sheet
●Outline
V
200
3
V
A
A
R
I
o
I
75
FSM
●Features
●Inner Circuit
High reliability
Small power mold type
Ultra low I
R
●Application
●Packaging Specifications
Packing
Switching power supply
Embossed Tape
Freewheel diode
Reverse polarity protection
●Structure
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
178
12
3000
TR
Silicon epitaxial planar
Taping Code
Marking
N2
(T =25ºC unless otherwise specified)
●Absolute Maximum Ratings
c
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Duty≦0.5
Limits
200
200
Unit
V
V
V
RM
V
Reverse direct voltage
R
Glass epoxy mounted、
I
60Hzhalf sin waveform、resistive load、
Average rectified forward current
3
A
A
o
T =129℃ Max.
c
60Hzhalf sin waveform、Non-repetitive、
I
Peak forward surge current
75
FSM
one cycle、T =25℃
a
Junction temperature(1)
Storage temperature
-
-
175
-55 ~ 175
℃
T
T
stg
j
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R .
d
j
th(j-a)
Attention
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2022/05/19_Rev.001