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RS810 PDF预览

RS810

更新时间: 2024-04-09 18:59:24
品牌 Logo 应用领域
润石 - RUNIC /
页数 文件大小 规格书
14页 459K
描述
电压检测和复位

RS810 数据手册

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RS810  
8 Specifications  
8.1 Absolute Maximum Ratings (1)  
over operating free-air temperature range (unless otherwise noted) (1)(2)  
MIN  
-0.5  
-0.5  
MAX  
6.0  
UNIT  
V
VCC  
VI  
Supply voltage range  
Input voltage range (2)  
V
6.0  
Voltage range applied to any output in the high-impedance or power-off  
state(2)  
Voltage range applied to any output in the high or low state (2)(3)  
Vo  
V
-0.5  
-0.5  
6.0  
Vo  
IIK  
V
mA  
mA  
mA  
mA  
°C/W  
°C  
VCC+0.5  
-20  
Input clamp current  
VI<0  
IOK  
IO  
Output clamp current  
VO<0  
-20  
Continuous output current  
Continuous current through VCC or GND  
Package thermal impedance (4)  
Junction temperature (5)  
Storage temperature  
±20  
±20  
θJA  
TJ  
SOT23  
295  
150  
150  
125  
-65  
-65  
-40  
Tstg  
TA  
°C  
Operating temperature  
°C  
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings  
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating  
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.  
(2) The input and output negative-voltage ratings may be exceeded if the input and output current ratings are observed.  
(3) The value of VCC is provided in the Recommended Operating Conditions table.  
(4) The package thermal impedance is calculated in accordance with JESD-51.  
(5) The maximum power dissipation is a function of TJ(MAX), RθJA, and TA. The maximum allowable power dissipation at any ambient  
temperature is PD = (T J(MAX) - TA) / RθJA. All numbers apply for packages soldered directly onto a PCB.  
8.2 ESD Ratings  
The following ESD information is provided for handling of ESD-sensitive devices in an ESD protected area only.  
VALUE  
UNIT  
V
Human-body model (HBM), MIL-STD-883K METHOD 3015.9  
Machine model (MM), JESD22-A115C (2010)  
±4000  
±200  
V(ESD) Electrostatic discharge  
V
ESD SENSITIVITY CAUTION  
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may  
be more susceptible to damage because very small parametric changes could cause the device not to meet its published  
specifications.  
6 / 14  
www.run-ic.com  

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