Datasheet > RHLG77110

RHLG77110

更新时间： 2024-09-30 06:07:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	210K
描述
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB

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RHLG77110 数据手册

PD-97178

2N7612M1

RADIATION HARDENED

IRHLG77110

LOGIC LEVEL POWER MOSFET

THRU-HOLE (MO-036AB)

100V, Quad N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHLG77110

IRHLG73110

100K Rads (Si) 0.22Ω

300K Rads (Si) 0.22Ω

1.8A

MO-036AB

International Rectifier’s R7^TMLogic Level Power

MOSFETs provide simple solution to interfacing

CMOS and TTL control circuits to power devices in

space and other radiation environments. The

threshold voltage remains within acceptable

operating limits over the full operating temperature

and post radiation. This is achieved while maintaining

single event gate rupture and single event burnout

immunity.

Features:

5V CMOS and TTL Compatible

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Light Weight

These devices are used in applications such as

current boost low signal source in PWM, voltage

comparator and operational amplifiers.

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 4.5V, T =25°C

Continuous Drain Current

1.8

= 4.5V, T =100°C Continuous Drain Current

1.1

7.2

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

1.4

W/°C

0.01

±10

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

1.8

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

0.14

V/ns

dv/dt

-55 to 150

Storage Temperature Range

^oC

STG

Lead Temperature

Weight

300 (0.063in/1.6mm from case for 10s)

1.3 (Typical)

For footnotes refer to the last page

www.irf.com

03/20/08

12 3 4 5 6 7...9

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