是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 7.91 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 0.5 A | 最大漏极电流 (ID): | 0.5 A |
最大漏源导通电阻: | 0.84 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e1 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.2 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | TIN SILVER COPPER | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 10 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NTR4003NT3G | ONSEMI |
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Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 |
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NTR4003NT1G | ONSEMI |
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Small Signal MOSFET 30 V, 0.56 A, Single N−Channel, SOT−23 |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RHL100 | OHMITE |
获取价格 |
POT 100 OHM 25W WIREWOUND LINEAR |
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RHL100E | OHMITE |
获取价格 |
POT 100 OHM 25W WIREWOUND LINEAR |
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RHL10K | OHMITE |
获取价格 |
Potentiometer, Wire Wound, 25W, 10000ohm, 10% +/-Tol |
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RHL10KE | OHMITE |
获取价格 |
Potentiometer, Wire Wound, 25W, 10000ohm, 10% +/-Tol, 1 Turn(s), ROHS COMPLIANT |
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RHL10R | OHMITE |
获取价格 |
POT 10 OHM 25W WIREWOUND LINEAR |
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RHL10RE | OHMITE |
获取价格 |
POT 10 OHM 25W WIREWOUND LINEAR |
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RHL125 | OHMITE |
获取价格 |
Potentiometer, Wire Wound, 25W, 125ohm, 10% +/-Tol |
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RHL125E | OHMITE |
获取价格 |
Potentiometer, Wire Wound, 25W, 125ohm, 10% +/-Tol, 1 Turn(s), ROHS COMPLIANT |
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RHL15K | OHMITE |
获取价格 |
Potentiometer, Wire Wound, 25W, 15000ohm, 10% +/-Tol |
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RHL15KE | OHMITE |
获取价格 |
POT 15K OHM 25W WIREWOUND LINEAR |
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