Datasheet > RH1200A

RH1200A

更新时间： 2023-12-06 19:52:30

品牌	Logo	应用领域
森美特 - SUNMATE		/
页数	文件大小	规格书
2页	208K
描述
High voltage diode High voltage diode 5kV and below

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数据手册

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RH1200A 数据手册

RH1200A - RH2000A

SURFACE MOUNT HIGH VLTAGE RECTIFEER DIODES

VOLTAGE RANGE: 1200 - 2000V

CURRENT: 0.5 A

Features

Low cost

Diffused junction

Low leakage

Low forward voltage drop

High current capability

Easily cleaned with alcohol,Isopropanol

and similar solvents

SMA(DO-214AC)

Dim

MinMax

2.29

4.00

1.27

0.15

4.80

0.10

0.76

2.01

2.92

4.60

1.63

0.31

5.59

0.20

1.52

2.62

Mechanical Data

Case: SMA/DO-214AC, Molded Plastic

Terminals: Solder Plated, Solderable

per MIL-STD-750, Method 2026

Polarity: Cathode Band or Cathode Notch

Marking: Type Number

Weight: 0.064 grams (approx.)

All Dimensions in mm

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

Unit

Symbol

RH1200A

RH1500A

RH1800A

RH2000A

Characteristic

Maximum recurrent peak reverse voltage

Maximum RMS voltage

1200

840

1200

1500

1050

1500

1800

1260

1800

2000

1400

2000

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

Maximum average forw ard rectified current

0.5

I_F(AV)

9.5mm lead length,

@T_A=75

Peak forw ard surge current

I_FSM

30.0

2.5

8.3ms single half-sine-w ave

superimposed on rated load @T_J=125

Maximum instantaneous forw ard voltage

@ 0.5A

V_F

I_R

Maximum reverse current

@T_A=25

5.0

100.0

500

at rated DC blocking voltage @T_A=100

Maximum reverse capacitance

Typical thermal resistance

Typical junction capacitance

(Note1)

(Note2)

(Note3)

/ W

t_rr

R_θJA

C_J

Operating junction temperature range

Storage temperature range

- 55 ---- + 150

T_J

T_STG

NOTE: 1. Measrued with I_F=0.5A, I_R=1A, I_rr=0.25A.

2. Thermal resistance f rom junction to ambient.

3. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.

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