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RGP30B-HE3/73 PDF预览

RGP30B-HE3/73

更新时间： 2024-01-22 06:49:53
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
4页 71K
描述
DIODE 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2, Rectifier Diode

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RGP30B-HE3/73 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：DO-201AD
包装说明：ROHS COMPLIANT, PLASTIC PACKAGE-2针数：2
Reach Compliance Code：unknown风险等级：5.59
Base Number Matches：1

RGP30B-HE3/73 数据手册

 浏览型号RGP30B-HE3/73的Datasheet PDF文件第2页浏览型号RGP30B-HE3/73的Datasheet PDF文件第3页浏览型号RGP30B-HE3/73的Datasheet PDF文件第4页 
RGP30A thru RGP30M  
Vishay General Semiconductor  
Glass Passivated Junction Fast Switching Rectifier  
FEATURES  
• Superectifier structure for high reliability condition  
• Cavity-free glass-passivated junction  
• Fast switching for high efficiency  
• Low leakage current, typical IR less than 0.2 μA  
• High forward surge capability  
SUPERECTIFIER®  
• Meets environmental standard MIL-S-19500  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
DO-201AD  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in fast switching rectification of power supply,  
inverters, converters and freewheeling diodes for  
consumer, automotive, and telecommunication.  
PRIMARY CHARACTERISTICS  
IF(AV)  
3.0 A  
MECHANICAL DATA  
VRRM  
IFSM  
VF  
50 V to 1000 V  
125 A  
Case: DO-201AD, molded epoxy over glass body  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS compliant, commercial grade  
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified  
1.3 V  
IR  
5.0 μA  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
TJ max.  
175 °C  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
meets JESD 201 class 2 whisker test  
Polarity: Color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL RGP30A RGP30B RGP30D RGP30G RGP30J RGP30K RGP30M UNIT  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current  
0.375" (9.5 mm) lead length at TA = 55 °C  
IF(AV)  
IFSM  
3.0  
A
A
Peak forward surge current 8.3 ms single  
half sine-wave superimposed on rated load  
125  
Maximum full load reverse current,  
full cycle average 0.375" (9.5 mm)  
lead length at TA = 55 °C  
IR(AV)  
100  
μA  
°C  
Operating junction and  
storage temperature range  
TJ, TSTG  
- 65 to + 175  
Document Number: 88704  
Revision: 15-Mar-11  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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