5秒后页面跳转
RGP30D PDF预览

RGP30D

更新时间: 2024-04-09 18:58:06
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
2页 279K
描述
3A,200V,150ns,Fast Recovery Rectifiers

RGP30D 数据手册

 浏览型号RGP30D的Datasheet PDF文件第2页 
GALAXY ELECTRICAL  
RGP30A- - - RGP30M  
BL  
VOLTAGE RANGE: 50 --- 1000 V  
CURRENT: 3.0 A  
FAST RECOVERY RECTIFIERS  
FEATURES  
Low cost  
Diffused junction  
Low leakage  
DO - 27  
Low forward voltage drop  
High current capability  
Easily cleaned with Freon,Alcohol,Isopropanol  
and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC DO-27,molded plastic  
Terminals: Axial lead ,solderable per  
MIL- STD-750,Method 2026  
Dimensions in millimeters  
Polarity: Color band denotes cathode  
Weight: 0.04 ounces,1.12 grams  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.  
RGP  
30A  
RGP  
30B  
RGP  
30D  
RGP  
30G  
RGP  
30J  
RGP  
30K  
RGP  
30M  
UNITS  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
100  
1000  
Maximum average forw ard rectified current  
3.0  
A
IF(AV)  
9.5mm lead length,  
@TA=75  
Peak forw ard surge current  
IFSM  
125.0  
1.3  
A
8.3ms single half-sine-w ave  
superimposed on rated load  
Maximum instantaneous forw ard voltage  
@ 3.0 A  
V
A
VF  
IR  
Maximum reverse current  
@TA=25  
5.0  
at rated DC blocking voltage @TA=100  
Maximum reverse recovery time (Note1)  
100.0  
150  
250  
500  
ns  
trr  
Typical junction capacitance  
Typical thermal resistance  
(Note2)  
(Note3)  
32  
22  
pF  
CJ  
Rθ  
/ W  
JA  
Operating junction temperature range  
- 55---- +125  
TJ  
Storage temperature range  
- 55---- + 150  
TSTG  
NOTE:1. Measured with IF=0.5A, IR=1A, Irr=0.25A.  
www.galaxycn.com  
2. Measured at 1.0MHz and applied reverse v oltage of 4.0V DC.  
3. Thermal resistance f rom junction to ambient.  
Document Number 2161112  
BLGALAXY ELECTRICAL  
1.  

与RGP30D相关器件

型号 品牌 描述 获取价格 数据表
RGP30D/1 VISHAY Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD,

获取价格

RGP30D/23 VISHAY Rectifier Diode, 1 Element, 3A, 200V V(RRM)

获取价格

RGP30D-AP MCC Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD

获取价格

RGP30D-B MCC Rectifier Diode

获取价格

RGP30D-B FRONTIER Rectifier Diode, 1 Phase, 1 Element, 3A, Silicon,

获取价格

RGP30D-E3 VISHAY DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectif

获取价格