2SJ530STL-E

更新时间： 2024-01-05 12:43:56

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2SJ530STL-E 数据手册

2SJ530(L), 2SJ530(S)

Silicon P Channel MOS FET

REJ03G0880-0500

(Previous: ADE-208-655C)

Rev.5.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.08 Ω typ.

4 V gate drive devices.

High speed switching.

•

Outline

RENESAS Package code: PRSS0004ZD-B

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (L)-(2) )

(Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Rev.5.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

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型号	品牌	描述	获取价格	数据表
2SJ531	HITACHI	Silicon P Channel MOS FET High Speed Power Switching	获取价格
2SJ531	RENESAS	Silicon P Channel MOS FET	获取价格
2SJ531-E	RENESAS	Silicon P Channel MOS FET	获取价格
2SJ532	RENESAS	Silicon P Channel MOS FET	获取价格
2SJ532	HITACHI	Silicon P Channel MOS FET High Speed Power Switching	获取价格
2SJ532-E	RENESAS	Silicon P Channel MOS FET	获取价格