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RD38F2010W0YBQ0 PDF预览

RD38F2010W0YBQ0

更新时间: 2024-01-07 18:32:42
品牌 Logo 应用领域
英特尔 - INTEL 静态存储器内存集成电路
页数 文件大小 规格书
54页 706K
描述
Memory Circuit, Flash+SRAM, 4MX16, CMOS, PBGA88, 8 X 10 MM, 1.20 MM HEIGHT, STACK, CSP-88

RD38F2010W0YBQ0 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:FBGA, BGA88,8X12,32Reach Compliance Code:unknown
风险等级:5.77Is Samacsys:N
JESD-30 代码:R-PBGA-B88内存集成电路类型:MEMORY CIRCUIT
混合内存类型:FLASH+PSRAM端子数量:88
最高工作温度:85 °C最低工作温度:-25 °C
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA88,8X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH电源:1.8,3 V
认证状态:Not Qualified最大待机电流:0.000005 A
子类别:Other Memory ICs最大压摆率:0.055 mA
表面贴装:YES技术:HYBRID
温度等级:OTHER端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
Base Number Matches:1

RD38F2010W0YBQ0 数据手册

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Intel® Wireless Flash Memory  
(W18/W30 SCSP)  
32WQ and 64WQ Family with Asynchronous RAM  
Datasheet  
Product Features  
Device Architecture  
Flash Performance  
Flash Density: 32-Mbit, 64-Mbit  
65 ns initial access at 1.8 V I/O  
Async PSRAM Density: 8-, 16-, 32-  
Mbit; Async SRAM Density: 4-, 8-, 16-  
Mbit  
70 ns initial access at 3.0 V I/O  
25 ns async page at 1.8 V or 3.0 V I/O  
14 ns sync reads (tCHQV) at 1.8 V I/O  
20 ns sync reads (tCHQV) at 3.0 V I/O  
Top, Bottom or Dual flash parameter  
configuration  
Enhanced Factory Programming:  
3.10 µs/Word (Typ)  
Device Voltage  
Flash VCC = 1.8 V; Flash VCCQ = 1.8 V  
or 3.0 V  
Flash Architecture  
Read-While-Write/Erase  
Asymmetrical blocking structure  
RAM VCC = 3.0 V; RAM VCCQ = 1.8 V  
or 3.0 V  
4-KWord parameter blocks (Top or  
Bottom); 32-KWord main blocks  
Device Packaging  
88 balls (8 x 10 active ball matrix);  
Area: 8x10 mm; Height: 1.2 mm to 1.4  
mm  
4-Mbit partition size  
128-bit One-Time Programmable (OTP)  
Protection Register  
PSRAM Performance  
70 ns initial access, 25 ns async page  
reads at 1.8 V I/O  
Zero-latency block locking  
Absolute write protection with block  
lock using F-VPP and F-WP#  
70 ns initial access async PSRAM at  
1.8V I/O  
Flash Software  
Intel® Flash Data Integrator (FDI) and  
Common Flash Interface (CFI)  
88 ns initial access, 30 ns async page  
reads at 1.8 V I/O  
85 ns initial access, 35 ns async page  
reads at 3.0 V I/O  
Quality and Reliability  
Extended Temperature: –25 °C to +85 °C  
Minimum 100K flash block erase cycle  
90 nm ETOX™ IX flash technology  
130 nm ETOX™ VIII flash technology  
70 ns initial access, 25 ns async page  
reads at 3.0 V I/O  
SRAM Performance  
70 ns initial access at 1.8 V or 3.0 V I/O  
The Intel® Wireless Flash Memory (W18/W30 SCSP) family offers various flash plus static  
RAM combinations in a common package footprint. The flash memory features 1.8 V low-  
power operations with flexible, multi-partition, dual-operation Read-While-Write / Read-While-  
Erase, asynchronous, and synchronous reads. This SCSP device integrates up to two flash die,  
one PSRAM die, and one SRAM die in a low-profile package compatible with other SCSP  
families with QUAD+ ballout.  
Order Number: 251407, Revision: 010  
18-Oct-2005  

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