Datasheet > RBN150N180S2HFWA

RBN150N180S2HFWA

更新时间： 2024-03-03 10:10:06

品牌	Logo	应用领域
瑞萨 - RENESAS		双极性晶体管
页数	文件大小	规格书
4页	145K
描述
1800V - 300A/150A - IGBT

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RBN150N180S2HFWA 数据手册

Datasheet

RBN150N180S2HFWA

1800V - 300A/150A - IGBT

R07DS1454EJ0100

Rev.1.00

Apr 11th, 2023

Features



Renesas generation 8^thTrench IGBT

Short circuit withstands time (10 s min.)

Optimized for high power application

Unsawn wafer Wafer size = 200 mm

Quality grade: Standard

Outline

wafer

1.Gate

2.Collector(The back)

3.Emitter

Absolute Maximum Ratings

(Tj = 25°C unless otherwise noted)

Item

Collector to emitter voltage

Gate to emitter voltage

Symbol

V_CES

V_GES

I_C

Ratings

Unit

1800

±30

300 ^Notes1

150 ^Notes1

175 ^Notes2

Collector current

Tc = 25°C

Tc = 100°C

I_C

Junction temperature

C

Notes: 1. Depends on thermal properties of assembly.

2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C.

3. Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may

affect a reliability even if it is within the absolute maximum ratings. Please consider derating condition for

appropriate reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for

Handling and Usage of Semiconductor Devices) and individual reliability data.

R07DS1454EJ0100 Rev.1.00

Apr 11th, 2023

Page 1 of 3

12 3 4

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