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RB541VM-30 PDF预览

RB541VM-30

更新时间: 2023-09-03 20:35:28
品牌 Logo 应用领域
罗姆 - ROHM 二极管
页数 文件大小 规格书
7页 1719K
描述
RB541VM-30是超低VF的小电流整流用途的肖特基势垒二极管。

RB541VM-30 数据手册

 浏览型号RB541VM-30的Datasheet PDF文件第2页浏览型号RB541VM-30的Datasheet PDF文件第3页浏览型号RB541VM-30的Datasheet PDF文件第4页浏览型号RB541VM-30的Datasheet PDF文件第5页浏览型号RB541VM-30的Datasheet PDF文件第6页浏览型号RB541VM-30的Datasheet PDF文件第7页 
RB541VM-30  
Schottky Barrier Diode  
Data sheet  
Outline  
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ ꢀꢀꢀꢀ  
ꢀ ꢀ ꢀ  
V
30  
200  
1
V
mA  
A
R
I
o
I
FSM  
ꢀ ꢀ  
Features  
Inner Circuit  
High reliability  
Small mold type  
Super Low V  
F
Application  
Packaging Specifications  
Packing  
Small current rectification  
Embossed Tape  
Reel Size(mm)  
180  
8
3000  
TE-17  
U
Taping Width(mm)  
Basic Ordering Unit(pcs)  
Taping Code  
Structure  
Epitaxial planar  
Marking  
(T = 25ºC unless otherwise stated)  
Absolute Maximum Ratings  
c
Parameter  
Repetitive peak reverse voltage  
Reverse voltage  
Symbol  
Conditions  
Duty0.5  
Reverse direct voltage  
Limits  
30  
30  
Unit  
V
V
V
RM  
V
R
Glass epoxy mounted60Hz half sin  
waveformresistiveload  
I
Average rectified forward current  
Peak forward surge current  
200  
1
mA  
A
o
60Hz half sinwaveform、  
I
FSM  
Non-repetitiveonecycleT =25℃  
a
T
T
stg  
Junction temperature  
Storage temperature  
-
-
125  
-55 125  
j
(T = 25ºC unless otherwise stated)  
Characteristics  
j
Parameter  
Symbol  
Conditions  
Min. Typ. Max. Unit  
V
I =10mA  
-
-
-
-
-
-
-
-
-
-
0.35  
0.49  
0.64  
10  
V
V
V
μA  
μA  
F1  
F
V
I =100mA  
Forward voltage  
F2  
F
V
I =200mA  
F3  
F
I
V =10V  
R1  
R
Reverse current  
I
R2  
V =30V  
R
45  
Cautionstatic electricity  
Attention  
www.rohm.com  
©2016 ROHMCo., Ltd.All rights reserved.  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
1/4  
2019/02/06_Rev.005  

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