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R8811_15 PDF预览

R8811_15

更新时间: 2024-01-03 01:40:58
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ELECTRON MULTIPLIER

R8811_15 数据手册

 浏览型号R8811_15的Datasheet PDF文件第2页 
ELECTRON MULTIPLIER  
R8811  
For Compact Mass Spectrometers  
OVERVIEW  
Quadrupole mass spectrometers used for residual gas analyzers  
have been downsized to solve problems of limited installation  
space. A trend of the downsizing would be an ever-greater de-  
gree in the future. However, it cannot be achieved just by reduc-  
ing the ion source and Quadrupole electrode sizes. Small ion  
detector is also required essentially. To meet the requirement,  
Hamamatsu has developed a compact ion detector. The unique  
ion detector breaks the performance barriers on conventional  
electron multipliers and will prove the ideal result for your needs.  
Figure 1: Typical Gain  
SPECIFICATIONS  
TEM B0060EB  
107  
GENERAL  
Parameter  
Input Aperture Diameter  
Dynode Structure  
Number of Dynode Stages  
First Dynode Material  
Total Built-in Resistance  
Operating Ambient Temperature  
Storage Temperature  
Description / Value  
Unit  
mm  
M  
°C  
°C  
3
Circular cage  
13  
Al2O3  
13  
-30 to +50  
-80 to +50  
Positive  
106  
105  
104  
103  
102  
Polarity of Detected Ions  
MAXIMUM RATINGS  
Parameter  
Anode to First Dynode Voltage  
Anode to Last Dynode Voltage  
Faraday Cup Voltage  
Value  
-2000  
200  
200  
1 × 10-2  
350  
Unit  
V
V
V
Operating Vacuum Level  
Bake-Out Temperature (at 5 × 10-3 Pa)  
Average Anode Current A  
Operating Gain  
Pa  
°C  
µA  
10  
1 × 107  
-1000  
-1500  
-2000  
CHARACTERISTICS  
Parameter  
Recommened Supply Voltage  
Gain (Typ.)  
DC Linearity (Typ.)  
Dark Current (Max.)  
SUPPLY VOLTAGE (V)  
Value  
-1500  
1 × 105  
5
1
1.6  
Unit  
V
µA  
pA  
ns  
Rise Time (Typ.)  
Anode to All Other Electrode Capacitance  
0.75  
pF  
NOTE: A Averaged over any interval of 30 seconds maximum.  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.  

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