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R7511 PDF预览

R7511

更新时间: 2024-02-18 23:11:57
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
2页 74K
描述
PHOTOMULTIPLIER TUBES

R7511 数据手册

 浏览型号R7511的Datasheet PDF文件第2页 
PHOTOMULTIPLIER TUBES  
PRELIMINARY DATA  
JUL. 1998  
R7311, R7511  
For Vacuum Ultraviolet Light Detection  
Cs-Te (R7311), Cs-I (R7511) Photocathode, MgF2 Window,  
13mm (1/2 Inch) Diameter, 9-stage, Side-on Type  
FEATURES  
Sensitivity in the Vacuum Ultraviolet Region  
R7311.............................................................115 to 320nm  
R7511.............................................................115 to 195nm  
High Quantum Efficiency (at 121.6nm)  
R7311...............................................................17.3% (Typ.)  
R7511...............................................................26.5% (Typ.)  
High Anode Sensitivity  
R7311 (at 200nm)................................3.8 × 105 A/W (Typ.)  
R7511 (at 121.6nm).............................5.2 × 104 A/W (Typ.)  
APPLICATIONS  
Emission Spectroscopy, etc.  
TPMSF0077  
Figure 1: Typical Spectral Response  
GENERAL  
Parameter  
Spectral Response  
Wavelength  
of Maximum Response  
Photocathode Material  
Window Material  
TPMSB0087EB  
100  
R7311  
115 to 320 115 to 195  
R7511  
Unit  
nm  
CATHODE  
RADIANT  
SENSITIVITY  
nm  
200  
130  
Cs-I  
Cs-Te  
10  
MgF2  
mm  
Minimum Effective Area  
Structure  
4 × 5  
Circular-cage  
9
Dynode  
Number of Stage  
Material  
QUANTUM  
1
Sb-Cs  
EFFICIENCY  
pF  
Direct  
Anode to Dynode No.9  
Approx. 1.7  
R7311  
Interelectrode Anode to  
Capacitances All Other Electrodes  
Base  
pF  
Approx. 2.0  
R7511  
g
11-pin base  
7
0.1  
Weight  
Suitable Socket for Base (supplied)  
E678-11H  
0.01  
100  
200  
300  
WAVELENGTH (nm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
1998 Hamamatsu Photonics K.K.  
©

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