Datasheet > R6502END3

R6502END3

更新时间： 2024-04-09 19:00:38

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
14页	2170K
描述
The R6xxxENx series are low-noise products, Super Junction MOSFETs, that place an emphasis on ease-of-use. This series products achieve superior performance for noise-sensitive applications to reduce noise, such as audio and lighting equipment.

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R6502END3 数据手册

R6502END3

Nch 650V 3.05ohm(typ.) Power MOSFET

Datasheet

llOutline

TO-252

V_DSS

650V

4.0Ω

±1.7A

26W

R_DS(on)(Max.)

I_D

P_D

llFeatures

llInner circuit

1) Low on-resistance

2) Fast switching

3) Drive circuits can be simple

4) Parallel use is easy

5) Pb-free lead plating ; RoHS compliant

llApplication

llPackaging specifications

Switching

Packing

Embossed Tape

TL1

Packing code

Marking

R6502END3

2500

Quantity (pcs)

llAbsolute maximum ratings (T = 25°C ,unless otherwise specified)

Parameter

Drain - Source voltage

Symbol

Value

650

Unit

V_DSS

Continuous drain current (T_c= 25°C)

Pulsed drain current

I_D

±1.7

±4

I_DP

static

±20

V_GSS

Gate - Source voltage

AC(f>1Hz)

±30

I_AS

Avalanche current, single pulse

Avalanche energy, single pulse

Power dissipation (T_c= 25°C)

Junction temperature

0.3

E_AS

℃

P_D

T_j

150

T_stg

Operating junction and storage temperature range

-55 to +150

www.rohm.com

1/11

20231221 - Rev.001

12 3 4 5 6 7...14

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