5秒后页面跳转
R600CH18F2GO PDF预览

R600CH18F2GO

更新时间: 2024-10-01 06:05:27
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 145K
描述
Silicon Controlled Rectifier, 4003.5 A, 1800 V, SCR

R600CH18F2GO 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CEDB-N2
Reach Compliance Code:unknownHTS代码:8541.30.00.80
风险等级:5.84其他特性:HIGH RELIABILITY
标称电路换相断开时间:70 µs配置:SINGLE
关态电压最小值的临界上升速率:200 V/us最大直流栅极触发电流:300 mA
最大直流栅极触发电压:3 VJESD-30 代码:O-CEDB-N2
元件数量:1端子数量:2
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:4003.5 A重复峰值关态漏电流最大值:300000 µA
断态重复峰值电压:1800 V重复峰值反向电压:1800 V
表面贴装:YES端子形式:NO LEAD
端子位置:END触发设备类型:SCR
Base Number Matches:1

R600CH18F2GO 数据手册

 浏览型号R600CH18F2GO的Datasheet PDF文件第2页 

与R600CH18F2GO相关器件

型号 品牌 获取价格 描述 数据表
R600CH18F2H IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element
R600CH18F2H0 IXYS

获取价格

Silicon Controlled Rectifier, 4390000mA I(T), 1800V V(DRM)
R600CH18F2H2 IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 360V V(RRM), 1 Element
R600CH18F2H3 IXYS

获取价格

Silicon Controlled Rectifier, 5087 A, 1800 V, SCR
R600CH18F2H4 IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 720V V(RRM), 1 Element
R600CH18F2H5 IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 900V V(RRM), 1 Element
R600CH18F2H6 IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 1080V V(RRM), 1 Element
R600CH18F2H7 IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 1260V V(RRM), 1 Element
R600CH18F2H8 IXYS

获取价格

Silicon Controlled Rectifier, 5087A I(T)RMS, 1800V V(DRM), 1440V V(RRM), 1 Element
R600CH18F2HO IXYS

获取价格

Silicon Controlled Rectifier, 4003.5A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element