Datasheet > R0487YS10D

R0487YS10D

更新时间： 2024-02-25 01:17:31

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	385K
描述
Silicon Controlled Rectifier,

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技术参数
数据手册

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R0487YS10D 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
风险等级：	5.16	Base Number Matches：	1

R0487YS10D 数据手册

WESTCODE An IXYS Company

Distributed Gate Thyristor types R0487YS10# to R0487YS14#

Characteristics

PARAMETER

MIN.

TYP. MAX. TEST CONDITIONS (Note 1)

UNITS

V_TM

V_T0

r_T

Maximum peak on-state voltage

Threshold voltage

2.7

1.738

0.943

I_TM=1000A

Slope resistance

mΩ

V/µs

(dv/dt)_crCritical rate of rise of off-state voltage

200

V_D=80% V_DRM, Linear ramp, Gate o/c

Rated V_DRM

I_DRM

I_RRM

V_GT

I_GT

V_GD

I_H

Peak off-state current

Peak reverse current

Rated V_RRM

Gate trigger voltage

3.0

T_j=25°C

V_D=10V, I_T=3A

Gate trigger current

200

Gate non-trigger voltage

Holding current

0.25 Rated V_DRM

1000 T_j=25°C

1.0

t_gd

Gate controlled turn-on delay time

Turn-on time

0.4

1.0

1.9

V_D=67% V_DRM, I_TM=2000A, di/dt=60A/µs,

µs

_FG=2A, t_r=0.5µs, T_j=25°C

t_gt

2.0

Q_rr

Q_ra

I_rm

Recovered charge

µC

Recovered charge, 50% Chord

Reverse recovery current

Reverse recovery time, 50% Chord

_TM=550A, t_p=500µs, di/dt=40A/µs, V_r=50V

t_rr

µs

I_TM=550A, t_p=500µs, di/dt=40A/µs, V_r=50V,

V_dr=80%V_DRM, dV_dr/dt=20V/µs

t_q

Turn-off time (note 2)

µs

_TM=550A, t_p=500µs, di/dt=40A/µs, V_r=50V,

V_dr=80%V_DRM, dV_dr/dt=200V/µs

0.05 Double side cooled

K/W

R_thJK

Thermal resistance, junction to heatsink

0.1

Single side cooled

Mounting force

Weight

W_t

Notes:-

1) Unless otherwise indicated T_j=125°C.

2) The required t_q(specified with dV_dr/dt=200V/µs) is represented by a ‘#’ in the device part number. See ordering information for

details of t_qcodes.

Data Sheet. Type R0487YS10# to R0487YS14# Issue 3

Page 2 of 12

October, 2004

123 4 5 6 7...12

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