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R0472YS14H

更新时间： 2024-01-15 23:31:10
品牌 Logo 应用领域
力特 - LITTELFUSE 栅栅极
页数 文件大小 规格书
12页 504K
描述
Silicon Controlled Rectifier, 945A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element,

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R0472YS14H 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：DISK BUTTON, O-CXDB-X3Reach Compliance Code：compliant
风险等级：5.69配置：SINGLE
最大直流栅极触发电流：200 mAJESD-30 代码：O-CXDB-X3
元件数量：1端子数量：3
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：ROUND
封装形式：DISK BUTTON认证状态：Not Qualified
最大均方根通态电流：945 A断态重复峰值电压：1400 V
重复峰值反向电压：1400 V表面贴装：YES
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
触发设备类型：SCRBase Number Matches：1

R0472YS14H 数据手册

 浏览型号R0472YS14H的Datasheet PDF文件第1页浏览型号R0472YS14H的Datasheet PDF文件第2页浏览型号R0472YS14H的Datasheet PDF文件第4页浏览型号R0472YS14H的Datasheet PDF文件第5页浏览型号R0472YS14H的Datasheet PDF文件第6页浏览型号R0472YS14H的Datasheet PDF文件第7页 
WESTCODE An IXYS Company  
Distributed Gate Thyristor types R0472YS12# to R0472YS16#  
Notes on Ratings and Characteristics  
1.0 Voltage Grade Table  
V
DRM VDSM VRRM  
VRSM  
V
VD VR  
DC V  
810  
Voltage Grade  
V
1200  
1400  
1600  
1200  
1400  
1600  
1300  
1500  
1700  
930  
1020  
2.0 Extension of Voltage Grades  
This report is applicable to other and higher voltage grades when supply has been agreed by  
Sales/Production.  
3.0 Extension of Turn-off Time  
This Report is applicable to other tq/re-applied dv/dt combinations when supply has been agreed by  
Sales/Production.  
4.0 Repetitive dv/dt  
Higher dv/dt selections are available up to 1000V/µs on request.  
5.0 De-rating Factor  
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.  
6.0 Snubber Components  
When selecting snubber components, care must be taken not to use excessively large values of snubber  
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to  
device damage due to the large resultant values of snubber discharge current. If required, please consult  
the factory for assistance.  
7.0 Rate of rise of on-state current  
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during  
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not  
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the  
total device current including that from any local snubber network.  
8.0 Gate Drive  
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V  
is assumed. This gate drive must be applied when using the full di/dt capability of the device.  
IGM  
4A/µs  
IG  
tp1  
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration  
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.  
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The  
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a  
magnitude in the order of 1.5 times IGT.  
Data Sheet. Types R0472YS12# to R0472YS16# AD Issue 1  
Page 3 of 12  
June, 2008  
1234567...12

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