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QT118H-G PDF预览

QT118H-G

更新时间: 2024-01-04 19:16:27
品牌 Logo 应用领域
昆腾 - QUANTUM 传感器
页数 文件大小 规格书
14页 422K
描述
CHARGE-TRANSFER TOUCH SENSOR

QT118H-G 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.92Base Number Matches:1

QT118H-G 数据手册

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temperature range. If fast temperature swings are expected, Without this capacitor the part can break into high frequency  
especially with higher sensitivities, more stable capacitors be oscillation, get physically hot, stop working, or become  
required, for example PPS film. In most moderate gain  
applications (ie in most cases), low-cost X7R types will work  
fine.  
damaged.  
PCB Cleanliness: All capacitive sensors should be treated  
as highly sensitive circuits which can be influenced by stray  
conductive leakage paths. QT devices have a basic  
resolution in the femtofarad range; in this region, there is no  
such thing as no clean flux. Flux absorbs moisture and  
becomes conductive between solder joints, causing signal  
drift and resultant false detections or temporary loss of  
sensitivity. Conformal coatings can trap existing amounts of  
moisture which will then become highly temperature  
sensitive.  
3.2 ELECTRODE WIRING  
See also Section 3.4.  
The wiring of the electrode and its connecting trace is  
important to achieving high signal levels and low noise.  
Certain design rules should be adhered to for best results:  
1. Use a ground plane under the IC itself and Cs and Rs  
but NOT under Re, or under or closely around the  
electrode or its connecting trace. Keep ground away  
from these things to reduce stray loading (which will  
dramatically reduce sensitivity).  
The designer should strongly consider ultrasonic cleaning as  
part of the manufacturing process, and in more extreme  
cases, the use of conformal coatings after cleaning and  
baking.  
2. Keep Cs, Rs, and Re very close to the IC.  
3.3.1 SUPPLY  
CURRENT  
3. Make Re as large as possible. As a test, check to be  
sure that an increase of Re by 50% does not appreciably  
decrease sensitivity; if it does, reduce Re until the 50%  
test increase has a negligible effect on sensitivity.  
Measuring average power consumption is a challenging task  
due to the burst nature of the devices operation. Even a  
good quality RMS DMM will have difficulty tracking the  
relatively slow burst rate, and will show erratic readings.  
4. Do not route the sense wire near other livetraces  
containing repetitive switching signals; the trace will pick  
up noise from external signals.  
The easiest way to measure Idd is to put a very large  
capacitor, such as 2,700µF across the power pins, and put a  
220 ohm resistor from there back to the power source.  
Measure the voltage across the 220 resistor with a DMM and  
compute the current based on Ohms law. This circuit will  
average out current to provide a much smoother reading.  
3.3 POWER SUPPLY, PCB LAYOUT  
The power supply can range from 2.5 to 5.0 volts. At 2.5 volts  
current drain averages less than 10µA with Cs = 10nF,  
provided a 470K Rs resistor is used (Figure 1-1). Sample Idd  
curves are shown in Figure 4-3.  
To reduce the current consumption the most, use high or low  
gain pin settings only, the smallest value of Cs possible that  
works, and a 470K resistor (Rs) across Cs (Figure 1-1). Rs  
acts to help discharge capacitor Cs between bursts, and its  
presence substantially reduces power consumption.  
Higher values of Cs will raise current drain. Higher Cx values  
can actually decrease power drain. Operation can be from  
batteries, but be cautious about loads causing supply droop  
(see Output Drive, Section 2.2.6) if the batteries are  
unregulated.  
3.3.2 ESD PROTECTION  
In cases where the electrode is placed behind a dielectric  
panel, the IC will be protected from direct static discharge.  
However even with a panel transients can still flow into the  
electrode via induction, or in extreme cases via dielectric  
breakdown. Porous materials may allow a spark to tunnel  
right through the material. Testing is required to reveal any  
problems. The device has diode protection on its terminals  
which will absorb and protect the device from most ESD  
events; the usefulness of the internal clamping will depending  
on the dielectric properties, panel thickness, and rise time of  
the ESD transients.  
As battery voltage sags with use or fluctuates slowly with  
temperature, the IC will track and compensate for these  
changes automatically with only minor changes in sensitivity.  
If the power supply is shared with another electronic system,  
care should be taken to assure that the supply is free of  
digital spikes, sags, and surges which can adversely affect  
the device. The IC will track slow changes in Vdd, but it can  
be affected by rapid voltage steps.  
if desired, the supply can be regulated using a conventional  
low current regulator, for example CMOS LDO regulators that  
have nanoamp quiescent currents. Care should be taken that  
the regulator does not have a minimum load specification,  
which almost certainly will be violated by the QT118's low  
current requirement. Furthermore, some LDO regulators are  
unable to provide adequate transient regulation between the  
quiescent and acquire states, creating Vdd disturbances that  
will interfere with the acquisition process. This can usually be  
solved by adding a small extra load from Vdd to ground, such  
as 10K ohms, to provide a minimum load on the regulator.  
The best method available to suppress ESD and RFI is to  
insert a series resistor Re in series with the electrode as  
shown in Figure 1-1. The value should be the largest that  
does not affect sensing performance. If Re is too high, the  
gain of the sensor will decrease.  
Because the charge and transfer times of the QT118 are  
relatively long (~2µs), the circuit can tolerate a large value of  
Re, often more than 10k ohms in most cases.  
Diodes or semiconductor transient protection devices or  
MOV's on the electrode trace are not advised; these devices  
have extremely large amounts of nonlinear parasitic  
capacitance which will swamp the capacitance of the  
electrode and cause false detections and other forms of  
instability. Diodes also act as RF detectors and will cause  
serious RF immunity problems.  
Conventional non-LDO type regulators are usually more  
stable than slow, low power CMOS LDO types. Consult the  
regulator manufacturer for recommendations.  
For proper operation a 100nF (0.1uF) ceramic bypass  
capacitor must be used between Vdd and Vss; the bypass  
cap should be placed very close to the devices power pins.  
lq  
7
QT118H R1.08 / 0405  

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